X-On Electronics has gained recognition as a prominent supplier of RSR010N10TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSR010N10TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSR010N10TL ROHM

RSR010N10TL electronic component of ROHM
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See Product Specifications
Part No.RSR010N10TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4V Drive Nch MOSFET
Datasheet: RSR010N10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3195 ea
Line Total: USD 1.6 
Availability - 596
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
596
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.3195
50 : USD 0.2599
150 : USD 0.2344
500 : USD 0.2024
3000 : USD 0.1882
6000 : USD 0.1797

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RSR010N10TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSR010N10TL and other electronic components in the MOSFETs category and beyond.

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RSR010N10 Datasheet Nch 100V 1A Small Signal MOSFET llOutline SOT-346T V 100V DSS SC-96 R (Max.) 520m DS(on) TSMT3 I 1A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance 2) Built-in G-S Protection Diode 3) Small Surface Mount Package (TSMT3) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type DC/DC converters Basic ordering unit (pcs) 3000 Taping code TL Marking ZJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 100 V DSS Continuous drain current I 1 A D *1 I Pulsed drain current 4 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 1.0 A AS *2 E Avalanche energy, single pulse 0.7 mJ AS *3 P 1.0 W D Power dissipation *4 P 0.7 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170220 - Rev.004 Not Recommended for New Designs RSR010N10 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 125 /W thJA Thermal resistance, junction - ambient *4 R - - 178 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 100 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 116.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 100V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -3.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1A - 370 520 GS D Static drain - source *5 R V = 4.5V, I = 1A - 400 560 m DS(on) GS D on - state resistance V = 4.0V, I = 1A - 410 580 GS D R Gate resistance f = 1MHz, open drain - 10 - G Forward Transfer *5 Y V = 10V, I = 1A 1.0 3.1 - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 1.0mH, V = 50V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20170220 - Rev.004 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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