X-On Electronics has gained recognition as a prominent supplier of RSQ015N06FRATR MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSQ015N06FRATR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSQ015N06FRATR ROHM

RSQ015N06FRATR electronic component of ROHM
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Part No.RSQ015N06FRATR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET, AEC-Q101, N-CH, 60V, TSMT
Datasheet: RSQ015N06FRATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.793 ea
Line Total: USD 0.79 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.793
10 : USD 0.6381
100 : USD 0.4661
500 : USD 0.3939
1000 : USD 0.3156
5000 : USD 0.2943

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
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We are delighted to provide the RSQ015N06FRATR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSQ015N06FRATR and other electronic components in the MOSFETs category and beyond.

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RSQ015N06 FRA Nch 60V 1.5A Power MOSFET Datasheet Outline (6) V TSMT6 60V DSS (5) (4) R (Max.) 290m DS(on) (1) I 1.5A D (2) P 1.25W D (3) Features Inner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE 5) AEC-Q101 Qualified Packaging specifications Packaging Taping Reel size (mm) 180 Application Tape width (mm) 8 DC/DC converters Type Basic ordering unit (pcs) 3,000 Taping code TR Marking PX Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 60 V DSS *1 Continuous drain current I 1.5 A D *2 Pulsed drain current A I 6 D,pulse V Gate - Source voltage 20 V GSS *3 P 1.25 W D Power dissipation *4 0.6 W P D T Junction temperature 150 C j Range of storage temperature T C 55 to +150 stg www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 1/11Data Sheet RSQ015N06FRA Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 Thermal resistance, junction - ambient R - - 100 C/W thJA *4 Thermal resistance, junction - ambient R - - 208 C/W thJA Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 60 - - V (BR)DSS GS D voltage V I = 1mA Breakdown voltage (BR)DSS D - 67 - mV/C temperature coefficient T referenced to 25C j I V = 60V, V = 0V Zero gate voltage drain current - - 1 A DSS DS GS I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 1.0 - 2.5 V GS (th) DS D V I = 1mA Gate threshold voltage (GS)th D - 4.4 - mV/C temperature coefficient T referenced to 25C j V =10V, I =1.5A - 210 290 GS D V =4.5V, I =1.5A - 240 330 GS D Static drain - source *5 R m DS(on) on - state resistance V =4V, I =1.5A - 255 350 GS D V =10V, I =1.5A, T =125C - 360 510 GS D j R Gate input resistannce f = 1MHz, open drain - 10 - G *5 V = 10V, I = 1.5A Transconductance 1.0 2.4 - S g DS D fs *1 Limited only by maximum temperature allowed. *2 Pw 10 s, Duty cycle 1% *3 Mounted on a seramic board (30300.8mm) *4 Mounted on a FR4 (15200.8mm) www.rohm.com 2016.06 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.B 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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