RSH070P05GZETB ROHM

4V Drive Pch MOSFET RSH070P05 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET SOP8 Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 RSH070P05 2 1 (1) Source (2) Source Absolute maximum ratings (Ta=25C) (3) Source Parameter Symbol Limits Unit (4) Gate (5) Drain Drain-source voltage V -45 V (1) (2) (3) (4) DSS (6 )Drain Gate-source voltage V 20 V (7) Drain GSS 1 ESD PROTECTION DIODE (8) Drain 2 BODY DIODE I Continuous 7.0 A D Drain current I Pulsed 28 A DP *1 Source current Continuous I -1.6 A S (Body diode) Pulsed I -28 A SP *1 Total power dissipation P 2W D *2 o Chanel temperature T 150 ch C o Range of Storage temperature T -55 to +150 stg C *1 PW 10 Duty cycle 1 *2 Mounted on a ceramic board Thermal resistance Parameter Symbol Limits Unit o Chanel to ambient R 62.5 th(ch-a) * C/W * Mounted on a ceramic board www.rohm.com 2009.12 - Rev.A 1/4 c 2009 ROHM Co., Ltd. All rights reserved. RSH070P05 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V(BR) DSS 45 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 45V, V =0V DSS DS GS Gate threshold voltage VGS (th) 1.0 2.5 V VDS= 10V, ID= 1mA 19 27 m ID= 7A, VGS= 10V Static drain-source on-state R 25 35 m I = 7A, V = 4.5V DS (on) D GS resistance 28 39 m ID= 7A, VGS= 4.0V Forward transfer admittance Yfs 10.0 SVDS= 10V, ID= 7A Input capacitance C 4100 pF V = 10V iss DS Output capacitance Coss 510 pF VGS=0V Reverse transfer capacitance Crss 330 pF f=1MHz Turn-on delay time t 31 ns VDD 25V d (on) ID= 3.5A Rise time tr 35 ns VGS= 10V Turn-off delay time td (off) 135 ns RL=7 Fall time t 50 ns RG=10 f Total gate charge Qg 34.0 47.6 nC V 25V VGS= 5V DD Gate-source charge Qgs 9.5 nC ID= 7A Gate-drain charge Q 12 nC RL=3.5 RG=10 gd Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.2 V IS= 7A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/4 c 2009 ROHM Co., Ltd. All rights reserved.