X-On Electronics has gained recognition as a prominent supplier of RSD131P10TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD131P10TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD131P10TL ROHM

Hot RSD131P10TL electronic component of ROHM
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See Product Specifications
Part No.RSD131P10TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET Trans MOSFET P-CH 100V 13A
Datasheet: RSD131P10TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
46: USD 0.902 ea
Line Total: USD 41.49 
Availability - 2784
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 46  Multiples: 1
Pack Size: 1
Availability Price Quantity
2448
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.353
10 : USD 1.133
100 : USD 0.9075
500 : USD 0.7909
1000 : USD 0.6622
2500 : USD 0.6248
5000 : USD 0.6215
10000 : USD 0.6083
25000 : USD 0.6072

2784
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 46
Multiples : 1
46 : USD 0.902
50 : USD 0.8142
100 : USD 0.7329
200 : USD 0.7069
500 : USD 0.6743
1000 : USD 0.6435
2500 : USD 0.6045

812
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 87
Multiples : 1
87 : USD 1.2844
100 : USD 1.2269
250 : USD 1.1778
500 : USD 1.1353

2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 87
Multiples : 1
87 : USD 1.2844
100 : USD 1.2269
250 : USD 1.1778
500 : USD 1.1353
1000 : USD 1.0982
2500 : USD 1.0658

   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the RSD131P10TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD131P10TL and other electronic components in the MOSFETs category and beyond.

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RSD131P10 Datasheet Pch -100V -13A Power MOSFET llOutline TO-252 V -100V DSS SC-63 R (Max.) 200m DS(on) CPT3 I 13A D P 20W D llInner circuit llFeatures 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 16 Type Switching Basic ordering unit (pcs) 2500 Taping code TL Marking 131P10 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V -100 V DSS *1 I Continuous drain current 13 A D *2 I Pulsed drain current 52 A DP V Gate - Source voltage 20 V GSS *1 P Power dissipation 20 W D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 1/11 20170302 - Rev.002 Not Recommended for New Designs RSD131P10 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *1 Thermal resistance, junction - case R - - 6.25 /W thJC llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -100 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -91.3 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -100V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 10 A GSS GS DS V Gate threshold voltage V = -10V , I = -1mA -1.0 - -2.5 V GS(th) DS D V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -6.5A - 135 200 GS D Static drain - source *3 R V = -4.5V, I = -6.5A - 150 220 m DS(on) GS D on - state resistance V = -4.0V, I = -6.5A - 155 230 GS D R Gate resistance f = 1MHz, open drain - 6.0 - G Forward Transfer *3 Y V = -10V, I = -13A 10 - - S fs DS D Admittance *1 Tc=25 , Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Pulsed www.rohm.com 2/11 20170302 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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