X-On Electronics has gained recognition as a prominent supplier of RSD080N06TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RSD080N06TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RSD080N06TL ROHM

RSD080N06TL electronic component of ROHM
RSD080N06TL ROHM
RSD080N06TL MOSFETs
RSD080N06TL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RSD080N06TL
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 4V Drive Nch MOSFET
Datasheet: RSD080N06TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
141: USD 0.4598 ea
Line Total: USD 64.83 
Availability - 2156
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ: 141  Multiples: 1
Pack Size: 1
Availability Price Quantity
621
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 136
Multiples : 1
136 : USD 0.7812
250 : USD 0.7498
500 : USD 0.7228

1672
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 136
Multiples : 1
136 : USD 0.7812
250 : USD 0.7498
500 : USD 0.7228
1000 : USD 0.6992

2156
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 141
Multiples : 1
141 : USD 0.4598
150 : USD 0.434
200 : USD 0.4242
500 : USD 0.4127
1000 : USD 0.4013

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Channel Mode
Operating Temperature Classification
Operating Temp Range
Drain-Source On-Volt
Package Type
Number Of Elements
Mounting
Pin Count
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Polarity
Type
Continuous Drain Current
Series
Brand
Cnhts
Hts Code
Mxhts
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Factory Pack Quantity :
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We are delighted to provide the RSD080N06TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RSD080N06TL and other electronic components in the MOSFETs category and beyond.

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Data Sheet 4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 <SOT-428> 0.5 Features 1) Low on-resistance. 2) 4V drive. 0.75 3) High power package(CPT3). 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 1.0 Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces) 2500 2 RSD080N06 (1) Gate (1) (2) (3) (2) Drain 1 ESD PROTECTION DIODE (3) Source 2 BODY DIODE Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GSS Continuous I 8A D Drain current *1 Pulsed I 16 A DP Continuous I 8A Source current S (Body Diode) *1 Pulsed I 16 A SP *2 Power dissipation P 15 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 T =25C C Thermal resistance Parameter Symbol Limits Unit * Channel to Case Rth (ch-c) 8.33 C / W * T =25C C www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.08 - Rev.A 1/6 Not Recommended for New Designs 0.9 5.5 1.5 0.8Min. 1.5 2.5 9.5Data Sheet RSD080N06 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 60 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =60V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D -57 80 I =8A, V =10V D GS Static drain-source on-state * R DS (on) -70 98 m I =8A, V =4.5V D GS resistance - 78 109 I =8A, V =4.0V D GS * Forward transfer admittance l Y l 4.8 - - S V =10V, I =8A fs DS D Input capacitance C - 380 - pF V =10V iss DS Output capacitance C - 90 - pF V =0V oss GS Reverse transfer capacitance C - 50 - pF f=1MHz rss Turn-on delay time t -9 - nsV 30V, I =4A ** d(on) DD D Rise time t - 13 - ns V =10V ** r GS Turn-off delay time t - 30 - ns R =7.5 ** d(off) L Fall time t ** - 10 - ns R =10 f G Total gate charge Q ** - 9.4 - nC V 30V, I =8A g DD D Gate-source charge Q - 1.8 - nC V =10V ** gs GS Gate-drain charge Q - 2.3 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.5 V I =8A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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