RSD050N10TL ROHM

4V Drive Nch MOSFET RSD050N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) <SOT-428> Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. Applications Switching Packaging specifications Inner circuit Package CPT3 1 Type Code TL Basic ordering unit (pieces) 2500 2 (1) Gate (2) Drain (3) Source *1 ESD Protection Diode Absolute maximum ratings (T =25C) a (1) (2) (3) *2 Body Diode Parameter Symbol Limits Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 V GSS Continuous I 5.0 A D Drain current *1*1 Pulsed I 20 A DP Continuous I 5.0 A Source current S *1 (Body Diode) Pulsed I 20 A SP *2 Power dissipation P 15 W D Channel temperature T 150 C ch Range of storage temperature T 55 to +150 C stg *1 Pw 10s, Duty cycle1% *2 T =25C c Thermal resistance Parameter Symbol Limits Unit * Channel to Case R 8.33 C / W th (ch-c) * T =25C c www.rohm.com 2012.02 - Rev.B 2012 ROHM Co., Ltd. All rights reserved. 1/6 Not Recommended for New DesignsDataSheet RSD050N10 Electrical characteristics (T =25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV = 20V, V =0V GSS GS DS Drain-source breakdown voltage V 100 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 10 AV =100V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D - 135 190 I =5.0A, V =10V D GS Static drain-source on-state * R - 142 200 m I =5.0A, V =4.5V DS (on) D GS resistance - 145 205 I =5.0A, V =4.0V D GS ** Forward transfer admittance l Y l 2.5 - - S I =5.0A, V =10V fs D DS Input capacitance C - 530 - pF V =25V iss DS Output capacitance C -50 - pFV =0V oss GS Reverse transfer capacitance C - 30 - pF f=1MHz rss Turn-on delay time t -10 - nsI =2.5A, V 50V d(on)** D DD Rise time t -15 - nsV =10V ** r GS Turn-off delay time t -45 - nsR =20 ** d(off) L Fall time t ** -15 - nsR =10 f G Total gate charge Q -14 - nCV 50V ** g DD Gate-source charge Q -1.7 - nCI =5.0A, ** gs D Gate-drain charge Q -3.0 - nCV =10V ** gd GS *Pulsed Body diode characteristics (Source-Drain) (T =25C) a Parameter Symbol Min. Typ. Max. Unit Conditions Forward Voltage V * -- 1.2 VI =5.0A, V =0V SD s GS *Pulsed www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.02 - Rev.B 2/6 Not Recommended for New Designs