NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a freewheeling diode. The device integrates all necessary items www.onsemi.com such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large MARKING DIAGRAMS variety of devices including logic gates, inverters, and microcontrollers. 3 SOT23 JW5 M CASE 318 Features 1 STYLE 21 2 Provides a Robust Driver Interface Between D.C. Relay Coil and Sensitive Logic Circuits JW5 = Specific Device Code Optimized to Switch Relays of 12 V Rail M = Date Code = PbFree Package Capable of Driving Relay Coils Rated up to 6.0 W at 12 V (Note: Microdot may be in either location) Internal Zener Eliminates the Need of FreeWheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter SC74 Systems Operation JW5 M CASE 318F 6 Low V Reduces System Current Drain DS(ON) STYLE 7 1 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and JW5 = Specific Device Code PPAP Capable M = Date Code = PbFree Package These are PbFree Devices (Note: Microdot may be in either location) Typical Applications Telecom: Line Cards, Modems, Answering Machines, FAX ORDERING INFORMATION Computers and Office: Photocopiers, Printers, Desktop Computers Device Package Shipping Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette NUD3112LT1G SOT23 3000 / Tape & (PbFree) Recorders Reel Industrial: Small Appliances, Security Systems, Automated Test SZNUD3112LT1G SOT23 3000 / Tape & (PbFree) Reel Equipment, Garage Door Openers NUD3112DMT1G SC74 3000 / Tape & (PbFree) Reel SZNUD3112DMT1G SC74 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Drain (6) Drain (3) 1.0 k Gate (1) Gate (2) Gate (5) 1.0 k 1.0 k 300 k 300 k 300 k Source (2) Source (1) Source (4) CASE 318 CASE 318F Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: October, 2016 Rev. 11 NUD3112/DNUD3112 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Symbol Rating Value Unit V Drain to Source Voltage Continuous 14 V DSS dc V Gate to Source Voltage Continuous 6 V GS dc I Drain Current Continuous 500 mA D E 50 mJ Single Pulse DraintoSource Avalanche Energy (T 25C) z Jinitial = Junction Temperature 150 C T J T Operating Ambient Temperature 40 to 85 C A T Storage Temperature Range 65 to +150 C stg P Total Power Dissipation (Note 1) SOT23 225 mW D Derating Above 25C 1.8 mW/C P Total Power Dissipation (Note 1) SC74 380 mW D Derating Above 25C 3.0 mW/C R Thermal Resistance JunctiontoAmbient (Note 1) SOT23 556 C/W JA 329 SC74 ESD Human Body Model (HBM) According to EIA/JESD22/A114 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto minimum pad board. TYPICAL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Sustaining Voltage (Internally Clamped) 14 16 17 V BRDSS (I = 10 mA) D B I = 1.0 mA 8 V VGSO g I Drain to Source Leakage Current DSS 20 (V = 12 V , V = 0 V, T = 25C) A DS GS A 40 (V = 12 V, V = 0 V, T = 85C) DS GS A I Gate Body Leakage Current GSS 35 A (V = 3.0 V, V = 0 V) GS DS 65 (V = 5.0 V, V = 0 V) GS DS ON CHARACTERISTICS V Gate Threshold Voltage GS(th) 0.8 1.2 1.4 V (V = V , I = 1.0 mA) GS DS D 0.8 1.4 (V = V , I = 1.0 mA, T = 85C) GS DS D A R Drain to Source OnResistance DS(on) 1.2 (I = 250 mA, V = 3.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V) D GS 0.9 (I = 500 mA, V = 5.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V, T =85C) D GS A 0.9 (I = 500 mA, V = 5.0 V, T =85C) D GS A I Output Continuous Current DS(on) 300 400 mA (V = 0.25 V, V = 3.0 V) DS GS 200 (V = 0.25 V, V = 3.0 V, T = 85C) DS GS A g Forward Transconductance 350 490 mmhos FS (V = 12.0 V, I = 0.25 A) OUT OUT www.onsemi.com 2