X-On Electronics has gained recognition as a prominent supplier of SZNUD3112DMT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. SZNUD3112DMT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SZNUD3112DMT1G ON Semiconductor

SZNUD3112DMT1G electronic component of ON Semiconductor
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See Product Specifications
Part No. SZNUD3112DMT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET MI SC74 12V IND LOAD DRVR
Datasheet: SZNUD3112DMT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1903
30000 : USD 0.1825
300000 : USD 0.1788
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Obsolete
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MOQ : 3000
Multiples : 3000
3000 : USD 0.2008
N/A

Obsolete
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MOQ : 1
Multiples : 1
1 : USD 1.755
10 : USD 0.8564
100 : USD 0.4847
250 : USD 0.4702
500 : USD 0.3777
1000 : USD 0.3031
3000 : USD 0.2853
6000 : USD 0.2741
9000 : USD 0.2652
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Obsolete
   
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We are delighted to provide the SZNUD3112DMT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZNUD3112DMT1G and other electronic components in the MOSFETs category and beyond.

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NUD3112 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps, and small DC motors without the need of a freewheeling diode. The device integrates all necessary items www.onsemi.com such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large MARKING DIAGRAMS variety of devices including logic gates, inverters, and microcontrollers. 3 SOT23 JW5 M CASE 318 Features 1 STYLE 21 2 Provides a Robust Driver Interface Between D.C. Relay Coil and Sensitive Logic Circuits JW5 = Specific Device Code Optimized to Switch Relays of 12 V Rail M = Date Code = PbFree Package Capable of Driving Relay Coils Rated up to 6.0 W at 12 V (Note: Microdot may be in either location) Internal Zener Eliminates the Need of FreeWheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter SC74 Systems Operation JW5 M CASE 318F 6 Low V Reduces System Current Drain DS(ON) STYLE 7 1 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and JW5 = Specific Device Code PPAP Capable M = Date Code = PbFree Package These are PbFree Devices (Note: Microdot may be in either location) Typical Applications Telecom: Line Cards, Modems, Answering Machines, FAX ORDERING INFORMATION Computers and Office: Photocopiers, Printers, Desktop Computers Device Package Shipping Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette NUD3112LT1G SOT23 3000 / Tape & (PbFree) Recorders Reel Industrial: Small Appliances, Security Systems, Automated Test SZNUD3112LT1G SOT23 3000 / Tape & (PbFree) Reel Equipment, Garage Door Openers NUD3112DMT1G SC74 3000 / Tape & (PbFree) Reel SZNUD3112DMT1G SC74 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. INTERNAL CIRCUIT DIAGRAMS Drain (3) Drain (6) Drain (3) 1.0 k Gate (1) Gate (2) Gate (5) 1.0 k 1.0 k 300 k 300 k 300 k Source (2) Source (1) Source (4) CASE 318 CASE 318F Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: October, 2016 Rev. 11 NUD3112/DNUD3112 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Symbol Rating Value Unit V Drain to Source Voltage Continuous 14 V DSS dc V Gate to Source Voltage Continuous 6 V GS dc I Drain Current Continuous 500 mA D E 50 mJ Single Pulse DraintoSource Avalanche Energy (T 25C) z Jinitial = Junction Temperature 150 C T J T Operating Ambient Temperature 40 to 85 C A T Storage Temperature Range 65 to +150 C stg P Total Power Dissipation (Note 1) SOT23 225 mW D Derating Above 25C 1.8 mW/C P Total Power Dissipation (Note 1) SC74 380 mW D Derating Above 25C 3.0 mW/C R Thermal Resistance JunctiontoAmbient (Note 1) SOT23 556 C/W JA 329 SC74 ESD Human Body Model (HBM) According to EIA/JESD22/A114 2000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto minimum pad board. TYPICAL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V Drain to Source Sustaining Voltage (Internally Clamped) 14 16 17 V BRDSS (I = 10 mA) D B I = 1.0 mA 8 V VGSO g I Drain to Source Leakage Current DSS 20 (V = 12 V , V = 0 V, T = 25C) A DS GS A 40 (V = 12 V, V = 0 V, T = 85C) DS GS A I Gate Body Leakage Current GSS 35 A (V = 3.0 V, V = 0 V) GS DS 65 (V = 5.0 V, V = 0 V) GS DS ON CHARACTERISTICS V Gate Threshold Voltage GS(th) 0.8 1.2 1.4 V (V = V , I = 1.0 mA) GS DS D 0.8 1.4 (V = V , I = 1.0 mA, T = 85C) GS DS D A R Drain to Source OnResistance DS(on) 1.2 (I = 250 mA, V = 3.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V) D GS 0.9 (I = 500 mA, V = 5.0 V) D GS 1.3 (I = 500 mA, V = 3.0 V, T =85C) D GS A 0.9 (I = 500 mA, V = 5.0 V, T =85C) D GS A I Output Continuous Current DS(on) 300 400 mA (V = 0.25 V, V = 3.0 V) DS GS 200 (V = 0.25 V, V = 3.0 V, T = 85C) DS GS A g Forward Transconductance 350 490 mmhos FS (V = 12.0 V, I = 0.25 A) OUT OUT www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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