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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCA20N60F N-Channel SuperFET FRFET MOSFET May 2014 FCA20N60F N-Channel SuperFET FRFET MOSFET 600 V, 20 A, 190 m Features Description 650 V T = 150C SuperFET MOSFET is Fairchild Semiconductors first J generation of high voltage super-junction (SJ) MOSFET family Typ. R = 150 m DS(on) that is utilizing charge balance technology for outstanding low Fast Recovery Type (Typ. T = 160 ns ) rr on-resistance and lower gate charge performance. This Ultra Low Gate Charge (Typ. Q = 75 nC ) g technology is tailored to minimize conduction loss, provide Low Effective Output Capacitance (Typ. C = 165 pF ) oss(eff.) superior switching performance, dv/dt rate and higher 100% Avalanche Tested avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, RoHS Compliant server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET MOSFETs optimized Applications body diode reverse recovery performance can remove LCD / LED / PDP TV additional component and improve system reliability. Solar Inverter AC-DC Power Supply D G G D TO-3PN S S Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FCA20N60F Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25C) 20 A D C - Continuous (T = 100C) 12.5 A C (Note 1) I Drain Current - Pulsed A DM 60 V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 690 mJ AS I Avalanche Current (Note 1) 20 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns (T = 25C) P Power Dissipation 208 W C D - Derate . bove 25C 1.67 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FCA20N60F Unit R Thermal Resistance, Junction-to-Case, Max. 0.6 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA www.fairchildsemi.com 2007 Fairchild Semiconductor Corporation 1 FCA20N60F Rev. C3