SH8J31 Datasheet -60V Pch +Pch Middle Power MOSFET llOutline V -60V DSS R (Max.) 70m DS(on) SOP8 I 4.5A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Motor Drive Basic ordering unit (pcs) 2500 Taping code TB Marking SH8J31 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -60 V DSS I Continuous drain current 4.5 A D *1 I Pulsed drain current 18 A DP V Gate - Source voltage 20 V GSS *2 I Avalanche current, single pulse -4.5 A AS *2 E Avalanche energy, single pulse 14 mJ AS total 2.0 *3 P D Power dissipation element 1.4 W *4 P total 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved. SH8J31 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 62.5 *3 R thJA Thermal resistance, junction - ambient element - - 89.2 /W *4 R total - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -60 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -60 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -60V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -1mA -1.0 - -3.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 3.0 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -4.5A - 50 70 GS D Static drain - source *5 R V = -4.5V, I = -4.5A - 55 80 m DS(on) GS D on - state resistance V = -4.0V, I = -4.5A - 60 85 GS D Gate resistance R f = 1MHz, open drain - 4.0 - G Forward Transfer *5 Y V = -10V, I = -4.5A 6.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 1mH, V = -30V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20151204 - Rev.002