X-On Electronics has gained recognition as a prominent supplier of TP2424N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP2424N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP2424N8-G Microchip

TP2424N8-G electronic component of Microchip
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See Product Specifications
Part No.TP2424N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -240V; -0.8A; 1.6W; SOT89-3
Datasheet: TP2424N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.3999
10 : USD 1.3791
25 : USD 1.1712
100 : USD 1.0672
250 : USD 0.969
500 : USD 0.8606
1000 : USD 0.819
4000 : USD 0.8089
10000 : USD 0.7875
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3365
3 : USD 1.1466
10 : USD 0.9711
15 : USD 0.936
40 : USD 0.8892
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TP2424N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP2424N8-G and other electronic components in the MOSFETs category and beyond.

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TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode (normally-off) Low threshold transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven silicon-gate manufacturing process. This Low input capacitance combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent Low input and output leakage in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- Applications induced secondary breakdown. Logic level interfaces Supertexs vertical DMOS FETs are ideally suited to a wide Solid state relays range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input Linear ampliers impedance, low input capacitance, and fast switching Power management speeds are desired. Analog switches Telecom switches Ordering Information R V I Package Option DS(ON) GS(th) D(ON) BV /BV DSS DGS Device (max) (max) (min) (V) TO-243AA (SOT-89) () (V) (mA) TP2424 TP2424N8-G -240 8.0 -2.4 -800 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN Absolute Maximum Ratings SOURCE DRAIN Parameter Value GATE Drain-to-source voltage BV TO-243AA (SOT-89) (N8) DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V W = Code for week sealed Operating and storage temperature -55C to +150C T P 4 C W = Green Packaging Soldering temperature* 300C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to TO-243AA (SOT-89) (N8) the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6 mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTP2424 Thermal Characteristics Power Dissipation I I D D I I jc ja DR DRM O Package T = 25 C (continuous) (pulsed) A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA (SOT-89) -316 -1.9 1.6 15 78 -316 -1.9 I (continuous) is limited by max rated T . D j Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -240 - - V V = 0V, I = -250A DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - - 4.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current - DSS V = 0.8 Max Rating, DS - -1.0 mA V = 0V, T = 125C GS A -0.3 - - V = -4.5V, V = -25V GS DS I On-state drain current A D(ON) -0.8 - - V = -10V, V = -25V GS DS - - 10 V = -4.5V, I = -150mA Static drain-to-source on-state GS D R DS(ON) resistance - - 8.0 V = -10V, I = -500mA GS D O R Change in R with temperature - - 0.75 %/ C V = -10V, I = -500mA DS(ON) DS(ON) GS D G Forward transconductance 150 - - mmho V = -25V, I = -200mA FS DS D C Input capacitance - - 200 ISS V = 0V, GS C Common source output capacitance - - 100 pF V = -25V, OSS DS f = 1.0 MHz C Reverse transfer capacitance - - 40 RSS t Turn-on delay time - - 20 d(ON) V = -25V, DD t Rise time - - 30 r ns I = -250mA, D t Turn-off delay time - - 35 d(OFF) R = 25 GEN t Fall time - - 25 f V Diode forward voltage drop - - -1.5 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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