X-On Electronics has gained recognition as a prominent supplier of TP0606N3-G-P002 MOSFETs across the USA, India, Europe, Australia, and various other global locations. TP0606N3-G-P002 MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TP0606N3-G-P002 Microchip

TP0606N3-G-P002 electronic component of Microchip
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Part No.TP0606N3-G-P002
Manufacturer: Microchip
Category: MOSFETs
Description: Microchip Technology MOSFET P-CH Enhancmnt Mode MOSFET
Datasheet: TP0606N3-G-P002 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.144 ea
Line Total: USD 1.14 
Availability - 1899
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1899
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.144
100 : USD 0.9449
250 : USD 0.9416
500 : USD 0.891
4000 : USD 0.8877

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TP0606N3-G-P002 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TP0606N3-G-P002 and other electronic components in the MOSFETs category and beyond.

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Supertex inc. TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, High input impedance silicon-gate manufacturing process. This combination produces a Low input capacitance (80pF typ.) device with the power handling capabilities of bipolar transistors Fast switching speeds and the high input impedance and positive temperature coefficient Low on-resistance inherent in MOS devices. Characteristic of all MOS structures, Free from secondary breakdown this device is free from thermal runaway and thermally-induced Low input and output leakage secondary breakdown. Supertexs vertical DMOS FETs are ideally suited to a wide range Applications of switching and amplifying applications where very low threshold Logic level interfaces ideal for TTL and CMOS voltage, high breakdown voltage, high input impedance, low input Solid state relays capacitance, and fast switching speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Package Wafer / Die Options Device NW NJ ND TO-92 (Die in wafer form) (Die on adhesive tape) (Die in waffle pack) TP0606 TP0606N3-G TP2506NW TP2506NJ TP2506ND For packaged products, -G indicates package is RoHS compliant (Green). Devices in Wafer / Die form are RoHS compliant (Green). Refer to Die Specification VF25 for layout and dimensions. Product Summary Pin Configuration R I V DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (max) (min) (V) (V) () (A) TP0606N3-G -60 3.5 -1.5 -2.4 DRAIN SOURCE Absolute Maximum Ratings Parameter Value GATE Drain-to-source voltage BV TO-92 (N3) DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V O O SiTP Operating and storage temperature -55 C to +150 C YY = Year Sealed 0606 Absolute Maximum Ratings are those values beyond which damage to the device WW = Week Sealed may occur. Functional operation under these conditions is not implied. Continuous YYWW = Green Packaging operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com TP0606 Thermal Characteristics Power Dissipation I I D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) C O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-92 320 -3.5 1.0 125 170 320 -3.5 Notes: I (continuous) is limited by max rated T . D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -60 - - V V = 0V, I = -2.0mA DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.0 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA V = 0V, T = 125C GS A -0.4 -0.6 - V = -5.0V, V = -25V GS DS I ON-state drain current A D(ON) -1.5 -2.5 - V = -10V, V = -25V GS DS - 5.0 7.0 V = -5.0V, I = -250mA GS D R Static drain-to-source on-state resistance DS(ON) - 3.0 3.5 V = -10V, I = -750mA GS D O R Change in R with temperature - - 1.7 %/ C V = -10V, I = -750mA DS(ON) DS(ON) GS D G Forward transductance 300 400 - mmho V = -25V, I = -750mA FS DS D C Input capacitance - 80 150 ISS V = 0V, GS C Common source output capacitance - 50 85 pF V = -25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 15 35 RSS t Turn-on delay time - - 10 d(ON) V = -25V, t Rise time - - 15 DD r ns I = -1.0A, D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 15 f V Diode forward voltage drop - - -1.8 V V = 0V, I = -1.0A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) f INPUT Output 0V R 90% 90% L OUTPUT 10% 10% V DD VDD Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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