TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20 V (DS) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET I (A) D VV rr APPLICATIONS ((BR)BR)DSDSSS DDSS((on)) Min (V) TN0201K TN0201KL Max ( ) V (V) GS(th) Direct Logic-Level Interface: TTL/CMOS 1.0 V = 10 V 0.42 0.64 GS Drivers: Relays, Solenoids, Lamps, Hammers, 2020 1.0 to 3.01 0 to 3 0 Displays, Memories, Transistors, etc. 1.4 V = 4.5 V 0.35 0.53 GS Battery Operated Systems Solid-State Relays TO-236 TO-226AA (SOT-23) (TO-92) 1 S Device Marking G 1 Front View 3 D S TN G 2 0201KL S 2 xxyy S = Siliconix Logo D 3 xxyy = Date Code Top View TN0201K Top View Marking Code: K3ywl TN0201KL K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability Ordering Information: TN0201K-T1E3 (Lead Free) Ordering Information: TN0201KL-TR1 ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Limit TN0201K TN0201KL Parameter Symbol Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 20 GS T = 25 C 0.42 0.64 A Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II DD JJ T = 70 C 0.33 0.51 A A a Pulsed Drain Current I 0.8 1.5 DM T = 25 C 0.35 0.8 A Power DissipationPower Dissipation PP WW DD T = 70 C 0.22 0.51 A Thermal Resistance, Junction-to-Ambient R 357 156 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 72671 www.vishay.com S-40245Rev. A, 16-Feb-04 1TN0201K/TN0201KL Vishay Siliconix New Product SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) A Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V 20 V = 0 V, I = 10 A (BR)DSS GS D VV Gate-Threshold Voltage V V = V , I = 0.25 mA 1.0 2.0 3.0 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J TN0201K 0.5 aa OnOn-State Drain CurrentState Drain Current II VV = 10 V = 10 V, V V = 10 V = 10 V AA D(D(on)) DSDS GSGS TN0201KL 0.8 V = 4.5 V, I = 0.1 A 0.8 1.4 GS D aa DrainDrain--SoSource Onurce On--ResistanceResistance rr DSDS((on)on) V = 10 V, I = 0.3 A 0.47 1.0 GS D a Forward Transconductance g V = 10 V, I = 0.3 A 550 mS fs DS D Diode Forward Voltage V I = 0.3 A, V = 0 V 0.85 1.2 V SD S GS b Dynamic Total Gate Charge Q 1000 1500 g V = 16 V, V = 10 V DS GS Gate-Source Charge Q 205 pC gs II 0.3 A 0.3 A DD Gate-Drain Charge Q 200 gd Gate Resistance R 48 g t 4.5 8 d(on) TTurn-On Turn On Tiimmee t V = 15 V, R = 50 8 15 DD L r II 030.3 A V A, V = 10 V= 10 V nsns DD GEGENN t 9 15 d(off) R = 6 G TTurn-urn-OfOfff T Tiimeme t 6.3 12 f Notes a. Pulse test: PW 300 s duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 0.8 1.0 V = 10 thru 5 V GS 4 V 0.7 0.8 0.6 0.5 0.6 0.4 0.4 0.3 T = 125 C J 0.2 0.2 3 V 0.1 25 C 55 C 2 V 0.0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 012345 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72671 www.vishay.com S-40245Rev. A, 16-Feb-04 2 I Drain Current (A) D I Drain Current (A) D