X-On Electronics has gained recognition as a prominent supplier of TN0201K-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN0201K-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN0201K-T1-E3 Vishay

TN0201K-T1-E3 electronic component of Vishay
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Part No.TN0201K-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V 0.42A 1.0Ohm
Datasheet: TN0201K-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.338 ea
Line Total: USD 0.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.338
5 : USD 0.332
50 : USD 0.2897
250 : USD 0.2197
1000 : USD 0.1799
2500 : USD 0.1678

   
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the TN0201K-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN0201K-T1-E3 and other electronic components in the MOSFETs category and beyond.

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TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20 V (DS) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET I (A) D VV rr APPLICATIONS ((BR)BR)DSDSSS DDSS((on)) Min (V) TN0201K TN0201KL Max ( ) V (V) GS(th) Direct Logic-Level Interface: TTL/CMOS 1.0 V = 10 V 0.42 0.64 GS Drivers: Relays, Solenoids, Lamps, Hammers, 2020 1.0 to 3.01 0 to 3 0 Displays, Memories, Transistors, etc. 1.4 V = 4.5 V 0.35 0.53 GS Battery Operated Systems Solid-State Relays TO-236 TO-226AA (SOT-23) (TO-92) 1 S Device Marking G 1 Front View 3 D S TN G 2 0201KL S 2 xxyy S = Siliconix Logo D 3 xxyy = Date Code Top View TN0201K Top View Marking Code: K3ywl TN0201KL K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability Ordering Information: TN0201K-T1E3 (Lead Free) Ordering Information: TN0201KL-TR1 ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Limit TN0201K TN0201KL Parameter Symbol Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 20 GS T = 25 C 0.42 0.64 A Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II DD JJ T = 70 C 0.33 0.51 A A a Pulsed Drain Current I 0.8 1.5 DM T = 25 C 0.35 0.8 A Power DissipationPower Dissipation PP WW DD T = 70 C 0.22 0.51 A Thermal Resistance, Junction-to-Ambient R 357 156 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 72671 www.vishay.com S-40245Rev. A, 16-Feb-04 1TN0201K/TN0201KL Vishay Siliconix New Product SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) A Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V 20 V = 0 V, I = 10 A (BR)DSS GS D VV Gate-Threshold Voltage V V = V , I = 0.25 mA 1.0 2.0 3.0 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J TN0201K 0.5 aa OnOn-State Drain CurrentState Drain Current II VV = 10 V = 10 V, V V = 10 V = 10 V AA D(D(on)) DSDS GSGS TN0201KL 0.8 V = 4.5 V, I = 0.1 A 0.8 1.4 GS D aa DrainDrain--SoSource Onurce On--ResistanceResistance rr DSDS((on)on) V = 10 V, I = 0.3 A 0.47 1.0 GS D a Forward Transconductance g V = 10 V, I = 0.3 A 550 mS fs DS D Diode Forward Voltage V I = 0.3 A, V = 0 V 0.85 1.2 V SD S GS b Dynamic Total Gate Charge Q 1000 1500 g V = 16 V, V = 10 V DS GS Gate-Source Charge Q 205 pC gs II 0.3 A 0.3 A DD Gate-Drain Charge Q 200 gd Gate Resistance R 48 g t 4.5 8 d(on) TTurn-On Turn On Tiimmee t V = 15 V, R = 50 8 15 DD L r II 030.3 A V A, V = 10 V= 10 V nsns DD GEGENN t 9 15 d(off) R = 6 G TTurn-urn-OfOfff T Tiimeme t 6.3 12 f Notes a. Pulse test: PW 300 s duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 0.8 1.0 V = 10 thru 5 V GS 4 V 0.7 0.8 0.6 0.5 0.6 0.4 0.4 0.3 T = 125 C J 0.2 0.2 3 V 0.1 25 C 55 C 2 V 0.0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 012345 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72671 www.vishay.com S-40245Rev. A, 16-Feb-04 2 I Drain Current (A) D I Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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