X-On Electronics has gained recognition as a prominent supplier of TN2404K-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN2404K-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN2404K-T1-GE3 Vishay

TN2404K-T1-GE3 electronic component of Vishay
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Part No.TN2404K-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
Datasheet: TN2404K-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1989 ea
Line Total: USD 596.7 
Availability - 26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
26190
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1989
6000 : USD 0.1969
9000 : USD 0.195
15000 : USD 0.193
24000 : USD 0.1911

1166
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8182
10 : USD 0.6974
30 : USD 0.6309
100 : USD 0.556
500 : USD 0.5234
1000 : USD 0.5077

18698
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8085
10 : USD 0.6347
100 : USD 0.4576
500 : USD 0.3806
1000 : USD 0.3553
3000 : USD 0.3157
24000 : USD 0.308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TN2404K-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2404K-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Low On-Resistance: 4 V Part V R I Q GS(th) Secondary Breakdown Free: 260 V DS DS(on) D g Number (V) ( ) (A) (Typ.) (A) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage = 10 V 0.8 to 2 4.87 nC 240 4 at V TN2404K, GS Excellent Thermal Stability 0.3 BS107KL Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TO-226AA TO-92-18RM APPLICATIONS (TO-92) (TO-18 Lead Form) TO-236 1 1 S D High-Voltage Drivers: Relays, (SOT-23) Solenoids, Lamps, Hammers, Displays, Transistors, etc. G G 2 2 G 1 Telephone Mute Switches, 3 D Ringer Circuits D S 3 3 S 2 Power Supply, Converters Top View Top View Motor Control Top View TN2404KL BS107KL TN2404K BENEFITS Device Marking Device Marking Marking Code: K1ywl Front View Front View Low Offset Voltage K1 = Part Number Code for TN2404K S TN S BS y = Year Code Full-Voltage Operation S = Siliconix Logo S = Siliconix Logo 2404KL 107KL w = Week Code xxyy = Date Code xxyy = Date Code xxyy xxyy l = Lot Traceability Easily Driven Without Buffer Low Error Voltage No High-Temperature Run-Away ORDRING INFORMATION Standard Partnumber Ordering Part Number Option TN2404K-T1-E3 Lead (Pb) free TN2404K TN2404K-T1-GE3 Lead (Pb) free and Halogen free TN2404KL TN2404KL-TR1-E3 With Tape and Reel Spool Option BS107KL BS107KL-TR1-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter SymbolTN2404KTN2404KL/BS107KLSymbol Drain-Source Voltage V 240 DS V Gate-Source Voltage V 20 GS 0.2 T = 25 C 0.3 A Continuous Drain Current (T = 150 C) I J D 0.16 A T = 70 C 0.25 A I 0.8 Pulsed Drain Current (t = 300 s) 1.4 DM 0.36 T = 25 C 0.8 A Maximum Power Dissipation P W D 0.23 T = 70 C 0.51 A b Thermal Resistance Junction-to-Ambient R 156 C/W 350 thJA T , T C Operating Junction and Storage Temperature Range - 55 to 150 J stg Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on an FR4 board. Document Number: 72225 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1767-Rev. C, 23-Jul-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000TN2404K/TN2404KL/BS107KL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Limits Parameter Symbol Test Conditions a Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 240 257 DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 0.8 1.65 2 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 192 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I DSS A V = 192 V, V = 0 V, T = 55 C 10 DS GS J V 10 V, V = 10 V 0.8 DS GS a I A On-State Drain Current D(on) V 10 V, V = 4.5 V 0.5 DS GS V 10 V, I = 0.3 A 2.2 4 GS D a R V 4.5 V, I = 0.2 A 2.3 4 Drain-Source On-State Resistance DS(on) GS D V 2.5 V, I = 0.1 A 2.4 6 GS D a g V = 10 V, I = 0.3 A 1.6 S Forward Transconductance fs DS D V V = 0 V, I = 0.3 A Diode Forward Voltage 0.8 1.2 V SD GS S b Dynamic Q Total Gate Charge 4.87 8 g Gate-Source Charge Q V = 192 V, V = 10 V, I = 0.5 A 0.56 nC gs DS GS D Q Gate-Drain Charge 1.53 gd t Turn-On Delay Time 510 d(on) t Rise Time V = 60 V, R = 200 12 20 r DD L ns I 0.3 A, V = 10 V, R = 25 t Turn-Off Delay Time D GEN g 35 60 d(off) t Fall Time 16 25 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 72225 2 S12-1767-Rev. C, 23-Jul-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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