X-On Electronics has gained recognition as a prominent supplier of US5U35TR MOSFET across the USA, India, Europe, Australia, and various other global locations. US5U35TR MOSFET are a product manufactured by ROHM. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

US5U35TR ROHM

US5U35TR electronic component of ROHM
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See Product Specifications
Part No.US5U35TR
Manufacturer: ROHM
Category: MOSFET
Description: ROHM Semiconductor MOSFET P Chan-45V-0.7A 4V Drive
Datasheet: US5U35TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

157: USD 0.2391 ea
Line Total: USD 37.54

Availability - 2861
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ: 157  Multiples: 1
Pack Size: 1
Availability Price Quantity
2861
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 141
Multiples : 1
141 : USD 0.2892
200 : USD 0.2877
500 : USD 0.2649
1000 : USD 0.2584
2000 : USD 0.2567

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US5U35TR from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US5U35TR and other electronic components in the MOSFET category and beyond.

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US5U35 Datasheet 4V Drive Pch+SBD MOSFET llOutline SOT-353T V -45V DSS SC-113CA R (Max.) 800m DS(on) TUMT5 I 0.7A D P 1.0W D llInner circuit llFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a single 2) High-speed switching, Low On-resistance 3) Built-in Low V schottky barrier diode F 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type switching Quantity (pcs) 3000 Taping code TR Marking U35 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a <MOSFET> Parameter Symbol Value Unit Drain - Source voltage V -45 V DSS V Gate - Source voltage 20 V GSS Continuous drain current I 0.7 A D *1 I Pulsed drain current 2.8 A DP Continuous source current (body diode) I -0.4 A S *1 I Pulsed source current (body diode) -2.8 A SP *3 P Power dissipation 0.7 W/element D Junction temperature T 150 j www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/10 20190527 - Rev.003 US5U35 Datasheet llAbsolute maximum ratings (T = 25C) a <Di> Parameter Symbol Value Unit V Repetitive peak reverse voltage 45 V RM V Reverse voltage 40 V R I Forward current 100 mA F *2 I Forward current surge peak 1.0 A FSM *3 P Power dissipation 0.5 W/element D T Junction temperature 150 j <MOSFET + Di> Parameter Symbol Value Unit *3 P Power dissipation 1.0 W/total D T Operating junction and storage temperature range -55 to +150 stg llElectrical characteristics (T = 25C) a <MOSFET> Values Parameter Symbol Conditions Unit Min. Typ. Max. I Gate - Source leakage current V = 20V, V = 0V - - 10 A GSS GS DS Drain - Source breakdown V V = 0V, I = -1mA -45 - - V (BR)DSS GS D voltage Zero gate voltage I V = -45V, V = 0V - - -1 A DSS DS GS drain current V V = -10V, I = -1mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS D V = -10V, I = -0.7A - 600 800 GS D Static drain - source *4 R V = -4.5V, I = -0.7A - 900 1300 m DS(on) GS D on - state resistance V = -4.0V, I = -0.35A - 1000 1400 GS D Forward Transfer *4 Y V = -10V, I = -0.7A 0.6 - - S fs DS D Admittance www.rohm.com 2/10 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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