X-On Electronics has gained recognition as a prominent supplier of US6K2TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6K2TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6K2TR ROHM

US6K2TR electronic component of ROHM
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See Product Specifications
Part No.US6K2TR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET 2N-CH 30V 1.4A
Datasheet: US6K2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1832 ea
Line Total: USD 0.92 
Availability - 1731
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1731
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1832
50 : USD 0.1613
150 : USD 0.1519
500 : USD 0.1402
3000 : USD 0.135
6000 : USD 0.1319

5614
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.5665
100 : USD 0.385
500 : USD 0.3113
1000 : USD 0.2827
3000 : USD 0.242
6000 : USD 0.2365
9000 : USD 0.2266

2939
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 27
Multiples : 1
27 : USD 1.5242
50 : USD 0.9522
100 : USD 0.5899
200 : USD 0.5882
500 : USD 0.4745
1000 : USD 0.4144
3000 : USD 0.3754

920
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 268
Multiples : 1
268 : USD 0.381
500 : USD 0.3672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
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We are delighted to provide the US6K2TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6K2TR and other electronic components in the MOSFETs category and beyond.

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US6K2 Datasheet Nch+Nch 30V 1.4A Small Signal MOSFET llOutline SOT-363T V 30V DSS R (Max.) 240m DS(on) TUMT6 I 1.4A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance. 2) -4V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K02 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 1.4 A D *1 I Pulsed drain current 5.6 A DP V Gate - Source voltage 20 V GSS total 1.0 *2 P D Power dissipation element 0.7 W *3 P total 0.91 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160727 - Rev.001 US6K2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 125 *2 R thJA Thermal resistance, junction - ambient element - - 179 /W *3 R total - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.4A - 170 240 GS D Static drain - source *4 R V = 4.5V, I = 1.4A - 250 350 m DS(on) GS D on - state resistance V = 4.0V, I = 1.4A - 270 380 GS D Gate resistance R f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = 10V, I = 1.4A 1 - - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160727 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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