US6X5TR ROHM

US6X5 Transistors Low frequency amplifier (12V, 2A) US6X5 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. 2) V : max. 370mV CE(sat) At lc=1.5A / l =75mA B ROHM : TUMT6 Abbreviated symbol : X05 z Absolute maximum ratings (Ta=25C) z Equivalent circuit Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 15 V VCEO 12 V Collector-emitter voltage Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 400 mW Power dissipation PC 3 (1) (2) (3) 1.0 W Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 15 V IC=10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 12 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=10A ICBO 100 nA VCB=15V Collector cutoff current Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 90 180 mV IC=1A, IB=50mA DC current gain hFE 270 680 VCE=2V, IC=200mA fT 360 MHz VCE=2V, IE=200mA, f=100MHz Transition frequency Collector output capacitance Cob 20 pF VCB=10V, IE=0A, f=1MHz Pulsed Rev.C 1/2 Not Recommended for New Designs 0.2Max.US6X5 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6X5 z Electrical characteristic curves 1000 1 1 VCE=2V Ta=100C IC/IB=20/1 Ta=25C Pulsed VCE=2V Pulsed Pulsed Ta=25C Ta=25C Ta=40C 0.1 0.1 Ta=100C Ta=40C 100 IC/IB=50/1 0.01 0.01 IC/IB=20/1 IC/IB=10/1 0.001 10 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain Fig.2 Base-emitter saturation voltage Fig.3 Collector-emitter saturation voltage vs. collector current vs. collector current vs. collector current 10 1000 1000 Ta=25C VCE=2V Ta=25C VCE=2V VCE=5V Pulsed f=100MHz f=100MHz 1 tstg 100 Ta=100C Ta=25C 100 0.1 Ta=40C 10 tdon 0.01 tf 0.001 tr 10 1 0 0.5 1 1.5 0.001 0.01 0.1 1 10 0.01 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product Fig.6 Switching time vs. emitter current characteristics 1000 Ta=25C IC=0A f=1MHz Cib 100 Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB V) ( COLLECTOR TO BASE VOLTAGE : VCB V) ( Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.C 2/2 Not Recommended for New Designs EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR TO EMITTER TRANSITION FREQUENCY : fT (MHz) SATURATION VOLTAGE : VCE(sat) (V) SWITCHING TIME : (ns) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)