X-On Electronics has gained recognition as a prominent supplier of US6T8TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. US6T8TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

US6T8TR ROHM

US6T8TR electronic component of ROHM
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See Product Specifications
Part No.US6T8TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP+PNP -12VCEO-1.5A SOT-363T
Datasheet: US6T8TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6974 ea
Line Total: USD 0.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6974
10 : USD 0.5247
100 : USD 0.3553
500 : USD 0.2849
1000 : USD 0.2607
3000 : USD 0.2145
6000 : USD 0.2145
9000 : USD 0.2057

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US6T8TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6T8TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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US6T8 Transistors General purpose amplification (12V, 1.5A) US6T8 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) 200mV At IC = 500mA / IB = 25mA ROHM : TUMT6 Abbreviated symbol : T08 z Equivalent circuit z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 1.5 A Collector current 1 ICP 3 A 2 400 mW/TOTAL 3 Power dissipation PC 1.0 W/TOTAL 3 0.7 W/ELEMENT (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC= 10A Collector-emitter breakdown voltage BVCEO 12 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 100 nA VCB= 15V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 85 200 mV IC= 500mA, IB= 25mA DC current gain hFE 270 680 VCE= 2V, IC= 200mA Transition frequency fT 400 MHz VCE= 2V, IE=200mA, f=100MHz Corrector output capacitance Cob 12 pF VCB= 10V, IE=0A, f=1MHz Pulsed Rev.B 1/2 0.2Max.US6T8 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6T8 z Electrical characteristic curves 1000 10 1 VCE= 2V IC / IB=20/1 Ta=25C Pulsed Pulsed Ta= 40C Pulsed Ta=25C Ta=100C VBE (sat) 1 IC / IB=50 IC / IB=20 0.1 IC / IB=10 Ta=100C Ta=100C Ta=25C 100 0.1 Ta=25C Ta= 40C Ta= 40C 0.01 0.01 VCE (sat) 0.001 10 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Collector-emitter saturation voltage Fig.1 DC current gain base-emitter saturation voltage vs. collector current vs. collector current vs. collector current 1000 10 1000 VCE=2V Ta=25C IC=20 IB1= 20 IB2 Ta=25C Pulsed VCE= 2V Pulsed Pulsed Ta=100C 1 Ta=25C 100 Ta= 40C tstg tf 0.1 100 10 tdon 0.01 tr 1 0.001 10 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) Fig.6 Switching time Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product characteristics vs. emitter current 100 IE=0A f=1MHz Cib Ta=25C Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) SWITCHING TIME : (ns)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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