US6T8 Transistors General purpose amplification (12V, 1.5A) US6T8 z Dimensions (Unit : mm) z Application Low frequency amplifier Driver z Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) 200mV At IC = 500mA / IB = 25mA ROHM : TUMT6 Abbreviated symbol : T08 z Equivalent circuit z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (6) (5) (4) Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 1.5 A Collector current 1 ICP 3 A 2 400 mW/TOTAL 3 Power dissipation PC 1.0 W/TOTAL 3 0.7 W/ELEMENT (1) (2) (3) Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms 2 Each Terminal Mounted on a Recommended t 3 Mounted on a 25mm25mm 0.8mm Ceramic substrate z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC= 10A Collector-emitter breakdown voltage BVCEO 12 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 100 nA VCB= 15V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 85 200 mV IC= 500mA, IB= 25mA DC current gain hFE 270 680 VCE= 2V, IC= 200mA Transition frequency fT 400 MHz VCE= 2V, IE=200mA, f=100MHz Corrector output capacitance Cob 12 pF VCB= 10V, IE=0A, f=1MHz Pulsed Rev.B 1/2 0.2Max.US6T8 Transistors z Packaging specifications Package Taping Type Code TR Basic ordering unit (pieces) 3000 US6T8 z Electrical characteristic curves 1000 10 1 VCE= 2V IC / IB=20/1 Ta=25C Pulsed Pulsed Ta= 40C Pulsed Ta=25C Ta=100C VBE (sat) 1 IC / IB=50 IC / IB=20 0.1 IC / IB=10 Ta=100C Ta=100C Ta=25C 100 0.1 Ta=25C Ta= 40C Ta= 40C 0.01 0.01 VCE (sat) 0.001 10 0.001 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage Fig.3 Collector-emitter saturation voltage Fig.1 DC current gain base-emitter saturation voltage vs. collector current vs. collector current vs. collector current 1000 10 1000 VCE=2V Ta=25C IC=20 IB1= 20 IB2 Ta=25C Pulsed VCE= 2V Pulsed Pulsed Ta=100C 1 Ta=25C 100 Ta= 40C tstg tf 0.1 100 10 tdon 0.01 tr 1 0.001 10 0.001 0.01 0.1 1 10 0 0.5 1.0 1.5 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) Fig.6 Switching time Fig.4 Grounded emitter propagation Fig.5 Gain bandwidth product characteristics vs. emitter current 100 IE=0A f=1MHz Cib Ta=25C Cob 10 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.B 2/2 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT : IC (A) DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF) BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) SWITCHING TIME : (ns)