X-On Electronics has gained recognition as a prominent supplier of US6M2GTR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6M2GTR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

US6M2GTR ROHM

US6M2GTR electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.US6M2GTR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET 2.5v Nch+Pch 6pin TUMT6; w/G-S Diode
Datasheet: US6M2GTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6222 ea
Line Total: USD 0.62 
Availability - 11511
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11511
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6222
10 : USD 0.5348
100 : USD 0.3818
500 : USD 0.3151
1000 : USD 0.2887
3000 : USD 0.2449

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the US6M2GTR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6M2GTR and other electronic components in the MOSFETs category and beyond.

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US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET z Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 zApplications Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR 1 Basic ordering unit (pieces) 3000 US6M2 2 2 1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (1) (2) (3) (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Unit Parameter Symbol Tr1 : Nchannel Tr2 : Pchannel Drain-source voltage VDSS 30 20 V V Gate-source voltage GSS 12 12 V I 1.5 1 A Continuous D Drain current 1 IDP 6 4 A Pulsed Continuous IS 0.6 0.4 A Source current 1 (Body diode) Pulsed ISP 6 4 A 1.0 W / TOTAL 2 Total power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Rth(ch-a) Channel to ambient 179 C/W / ELEMENT Mounted on a ceramic board Rev.A 1/3 0.2Max.US6M2 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage V 0.5 1.5 V V = 10V, I = 1mA GS (th) DS D 170 240 m ID= 1.5A, VGS= 4.5V Static drain-source on-state RDS (on) 180 250 m ID= 1.5A, VGS= 4V resistance 240 340 m I = 1.5A, V = 2.5V D GS Forward transfer admittance Yfs 1.5 SVDS= 10V, ID= 1.5A Input capacitance Ciss 80 pF VDS= 10V Output capacitance Coss 13 pF VGS=0V Reverse transfer capacitance C 12 pF f=1MHz rss Turn-on delay time td (on) 7 ns VDD 15V ID= 0.75A Rise time tr 9 ns VGS= 4.5V Turn-off delay time t 15 ns d (off) RL= 20 Fall time tf 6 ns RG=10 Total gate charge Qg 1.6 2.2 nC VDD 15V, VGS= 4.5V Gate-source charge Qgs 0.5 nC ID= 1.5A Gate-drain charge Q 0.3 nC R = 10, R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.6A, VGS=0V Rev.A 2/3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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