US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET z Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M02 zApplications Switching z Packaging specifications z Inner circuit (6) (5) (4) Package Taping Type Code TR 1 Basic ordering unit (pieces) 3000 US6M2 2 2 1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (1) (2) (3) (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Unit Parameter Symbol Tr1 : Nchannel Tr2 : Pchannel Drain-source voltage VDSS 30 20 V V Gate-source voltage GSS 12 12 V I 1.5 1 A Continuous D Drain current 1 IDP 6 4 A Pulsed Continuous IS 0.6 0.4 A Source current 1 (Body diode) Pulsed ISP 6 4 A 1.0 W / TOTAL 2 Total power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Rth(ch-a) Channel to ambient 179 C/W / ELEMENT Mounted on a ceramic board Rev.A 1/3 0.2Max.US6M2 Transistors N-ch z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=12V, VDS=0V Drain-source breakdown voltage V(BR) DSS 30 VID= 1mA, VGS=0V Zero gate voltage drain current IDSS 1 AVDS= 30V, VGS=0V Gate threshold voltage V 0.5 1.5 V V = 10V, I = 1mA GS (th) DS D 170 240 m ID= 1.5A, VGS= 4.5V Static drain-source on-state RDS (on) 180 250 m ID= 1.5A, VGS= 4V resistance 240 340 m I = 1.5A, V = 2.5V D GS Forward transfer admittance Yfs 1.5 SVDS= 10V, ID= 1.5A Input capacitance Ciss 80 pF VDS= 10V Output capacitance Coss 13 pF VGS=0V Reverse transfer capacitance C 12 pF f=1MHz rss Turn-on delay time td (on) 7 ns VDD 15V ID= 0.75A Rise time tr 9 ns VGS= 4.5V Turn-off delay time t 15 ns d (off) RL= 20 Fall time tf 6 ns RG=10 Total gate charge Qg 1.6 2.2 nC VDD 15V, VGS= 4.5V Gate-source charge Qgs 0.5 nC ID= 1.5A Gate-drain charge Q 0.3 nC R = 10, R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS= 0.6A, VGS=0V Rev.A 2/3