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X-On Electronics has gained recognition as a prominent supplier of UF3C065030B3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. UF3C065030B3 MOSFETs are a product manufactured by UnitedSiC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UF3C065030B3 UnitedSiC

UF3C065030B3 electronic component of UnitedSiC
UF3C065030B3 UnitedSiC
UF3C065030B3 MOSFETs
UF3C065030B3  Semiconductors

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See Product Specifications
Part No. UF3C065030B3
Manufacturer: UnitedSiC
Category: MOSFETs
Description: MOSFET 650V/30mOhm, SiC, FAST CASCODE, G3, D2PAK-3L
Datasheet: UF3C065030B3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 19.9946 ea
Line Total: USD 19.99 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 19.9946
10 : USD 18.3702
25 : USD 17.6081

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UF3C065030B3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UF3C065030B3 and other electronic components in the MOSFETs category and beyond.

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650V-27mW SiC Cascode Rev. A, March 2019 DATASHEET Description United Silicon Carbide s cascode products co-package its high- UF3C065030B3 performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard TAB gate drive. D (2) Features TAB w Typical on-resistance R of 27mW DS(on),typ w Maximum operating temperature of 175C w Excellent reverse recovery G (1) w Low gate charge 2 w Low intrinsic capacitance 3 1 w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible S (3) . under typical operating conditions) Typical applications w EV charging Part Number Package Marking w PV inverters 2 D PAK-3L UF3C065030B3 UF3C065030B3 w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C065030B3 Rev. A, March 2019 1Maximum Ratings Parameter Symbol Test Conditions Value Units V Drain-source voltage 650 V DS Gate-source voltage V DC -25 to +25 V GS T = 25C 65 A C 1 I Continuous drain current D T = 100C 47 A C 2 T = 25C Pulsed drain current I 230 A C DM 3 L=15mH, I =4A E 120 mJ Single pulsed avalanche energy AS AS T = 25C Power dissipation P 242 W C tot Maximum junction temperature T 175 C J,max Operating and storage temperature T , T -55 to 175 C J STG Max. lead temperature for soldering, T 250 C L 1/8 from case for 5 seconds 1. Limited by T J,max 2. Pulse width t limited by T p J,max 3. Starting T = 25C J Thermal Characteristics Value Parameter Symbol Test Conditions Units Min Typ Max Thermal resistance, junction-to-case R 0.48 0.62 C/W qJC Datasheet: UF3C065030B3 Rev. A, March 2019 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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