Green DMTH43M8LK3Q 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 3.6m V = 10V 100A GS 40V and Robust End Application 5.2m V = 5V 90A GS Low R Ensures On State Losses are Minimized DS(ON) Excellent Q x R Product (FOM) gd DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: TO252 (DPAK) Power Management Functions Case Material: Molded Plastic, Green Molding Compound. UL DC-DC Converters Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMTH43M8LK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH43M8LK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 17.6 A Continuous Drain Current, V = 10V (Note 6) I A GS D 12.5 T = +100C A T = +25C 100 C A Continuous Drain Current, V = 10V (Note 7) I GS D 80 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 150 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 70 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 150 A SM Avalanche Current, L=1mH 13.2 A I AS Avalanche Energy, L=1mH 87 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 3.1 W P D Thermal Resistance, Junction to Ambient (Note 6) 47 C/W R JA Total Power Dissipation (Note 7) 88 W P D Thermal Resistance, Junction to Case (Note 7) R 1.7 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 2.5 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.9 3.6 m V = 10V, I = 20A DS(ON) GS D Static Drain-Source On-Resistance 4.3 5.2 m R V = 5V, I = 15A DS(ON) GS D Diode Forward Voltage 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,693 C iss V = 20V, V = 0V, DS GS Output Capacitance 1,172 pF C oss f = 1MHz Reverse Transfer Capacitance 52 C rss 2.54 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 38.5 Total Gate Charge (V = 10V) Q nC GS g 17.6 Total Gate Charge (V = 4.5V) Q GS g V = 20V, I = 20A DS D 6.9 Gate-Source Charge Q nC gs 6.9 Gate-Drain Charge Q gd 5.2 Turn-On Delay Time t D(ON) Turn-On Rise Time 5.7 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 23.5 I = 20A, R = 1.6 t D G D(OFF) Turn-Off Fall Time 11 t F Body Diode Reverse Recovery Time 35.4 ns t RR I = 15A, di/dt = 100A/s F 32.9 Body Diode Reverse Recovery Charge Q nC RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH43M8LK3Q April 2017 Diodes Incorporated www.diodes.com Document number: DS39337 Rev. 3 - 2