DMTH6002LPS 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Max BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching (UIS) Test in Production 205A 2m VGS = 10V Ensures More Reliable and Robust End Application Thermally Efficient Package Cooler Running Applications 60V 170A 3m VGS = 6V High Conversion Efficiency 165A 3.3m VGS = 4.5V Low RDS(ON) Minimizes On-State Losses <1.1mm Package Profile Ideal for Thin Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMTH6002LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS TC = +25C 205 Continuous Drain Current, V = 10V (Note 6) I A GS D 145 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 820 A IDM Continuous Body Diode Forward Current (Note 6) 205 A TC = +25C IS Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 820 A ISM Avalanche Current, L = 3mH 14 A IAS Avalanche Energy, L = 3mH EAS 294 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 5) Steady State 50 C/W RJA Total Power Dissipation (Note 6) 167 W TC = +25C PD Thermal Resistance, Junction to Case (Note 6) RJC 0.9 C/W Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A IDSS VDS = 48V, VGS = 0V Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 3 V VGS(TH) VDS = VGS, ID = 250A 1.7 2 VGS = 10V, ID = 30A Static Drain-Source On-Resistance 2 3 m RDS(ON) VGS = 6V, ID = 30A 2.3 3.3 V = 4.5V, I = 30A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 50A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 6555 iss VDS = 30V, VGS = 0V, Output Capacitance C 2264 pF oss f = 1MHz Reverse Transfer Capacitance C 187 rss Gate Resistance R 0.7 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 130.8 GS g 63.6 Total Gate Charge (VGS = 4.5V) Qg nC V = 30V, I = 50A DS D Gate-Source Charge 20.8 Qgs Gate-Drain Charge 29.4 Qgd Turn-On Delay Time tD(ON) 11.2 Turn-On Rise Time t 10.8 V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time t 44 ID = 50A, Rg = 2.5 D(OFF) Turn-Off Fall Time t 19.5 F Reverse Recovery Time t 61.8 ns RR I = 50A, di/dt = 100A/s F Reverse Recovery Charge Q 123 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 May 2021 DMTH6002LPS Diodes Incorporated www.diodes.com Document number: DS38143 Rev. 8 - 2