Green DMPH6023SK3 60V 175C P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max Rated to +175C Ideal for High Ambient Temperature D V R Max (BR)DSS DS(ON) T = +25C C Environments 33m V = -10V -35A GS 100% Unclamped Inductive Switching Ensures More Reliable -60V 40m V = -4.5V GS -32A and Robust End Application Low On-Resistance Low Input Capacitance Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to meet the stringent requirements Halogen and Antimony Free. Green Device (Note 3) of Automotive applications. Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Case: TO252 (DPAK) It is qualified to AECQ101, supported by a PPAP and is ideal for use in: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Engine Management Systems Moisture Sensitivity: Level 1 per J-STD-020 Body Control Electronics Terminal Connections: See Diagram DCDC Converters Weight: 0.33 grams (Approximate) TO252 (DPAK) D G S Pin Out Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMPH6023SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH6023SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -35 C I A D State -27 T = +100C C Continuous Drain Current (Note 6) V = -10V GS Steady T = +25C -7.3 A A I D State -6.1 T = +70C A Pulsed Drain Current (380s pulse, duty cycle = 1%) I -60 A DM Maximum Continuous Body Diode Forward Current (Note 6) I -2.2 A S Avalanche Current (Note 7) L = 0.1mH I -35 A AS Avalanche Energy (Note 7) L = 0.1mH E 60 mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 2.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 80 C/W JA Total Power Dissipation (Note 6) P 3.2 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 41 JA C/W Thermal Resistance, Junction to Case R 1.6 JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1.0 -3.0 V V V = V , I = -250A GS(th) DS GS D 33 V = -10V, I = -10A GS D Static Drain-Source On-Resistance R m DS(ON) 40 V = -4.5V, I = -8A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 2,569 pF iss V = -30V, V = 0V, DS GS Output Capacitance C 179 pF oss f = 1.0MHz Reverse Transfer Capacitance C 143 pF rss 5 Gate Resistance Rg VDS = 0V, VGS = 0V, f = 1MHz 26.5 nC Total Gate Charge (V = -4.5V) Q GS g 53.1 nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D Gate-Source Charge 7.1 nC Q gs Gate-Drain Charge 12.6 nC Q gd 6 Turn-On Delay Time t nS D(on) 7.1 Turn-On Rise Time t nS r VGS = -10V, VDS = -30V, 110 Turn-Off Delay Time t nS R = 3, I = -5A D(off) G D 62 Turn-Off Fall Time t nS f Body Diode Reverse Recovery Time t 20 nS rr I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 14 nC Qrr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout, see