X-On Electronics has gained recognition as a prominent supplier of TN2425N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TN2425N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TN2425N8-G Microchip

TN2425N8-G electronic component of Microchip
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See Product Specifications
Part No.TN2425N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 250V; 1.5A; 1.6W; SOT89-3
Datasheet: TN2425N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
33: USD 1.248 ea
Line Total: USD 41.18 
Availability - 324
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 33  Multiples: 1
Pack Size: 1
Availability Price Quantity
630
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 500
Multiples : 500
500 : USD 1.575
1000 : USD 1.55
1500 : USD 1.525
2000 : USD 1.5
4000 : USD 1.475

110
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3
Multiples : 1
3 : USD 1.5443
10 : USD 1.5367
25 : USD 1.3826
100 : USD 1.3138

155
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 2.635
10 : USD 2.2961
30 : USD 2.0853
100 : USD 1.7542
500 : USD 1.6565
1000 : USD 1.6123

2545
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.441
25 : USD 1.254
100 : USD 1.177
4000 : USD 1.166

110
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 8
Multiples : 1
8 : USD 1.5443
10 : USD 1.5367
25 : USD 1.3826
100 : USD 1.3138

324
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 33
Multiples : 1
33 : USD 1.248
50 : USD 1.1375
100 : USD 1.1342
200 : USD 1.1148

   
Manufacturer
Product Category
Kind Of Channel
Case
Mounting
Polarisation
Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TN2425N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TN2425N8-G and other electronic components in the MOSFETs category and beyond.

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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Image Part-Description
Stock Image TN2435N8-G
Transistor: N-MOSFET; unipolar; 350V; 1A; 1.6W; SOT89-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Supertex inc. TN2425 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold This low threshold, enhancement-mode (normally-off) High input impedance transistor utilizes a vertical DMOS structure and Supertexs Low input capacitance well-proven, silicon-gate manufacturing process. This Fast switching speeds combination produces a device with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced Applications secondary breakdown. Logic level interfaces ideal for TTL and CMOS Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Battery operated systems wide range of switching and amplifying applications where Photo voltaic drives very low threshold voltage, high breakdown voltage, high Analog switches input impedance, low input capacitance, and fast switching General purpose line drivers speeds are desired. Telecom switches Ordering Information Product Summary R I Part Number Package Option Packing DS(ON) DSS BV /BV DSS DGS (min) (max) TN2425N8-G TO-243AA (SOT-89) 2000/Reel 25V 3.58 1.5A -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS SOURCE Gate-to-source voltage 20V DRAIN O O Operating and storage temperature -55 C to +150 C GATE Absolute Maximum Ratings are those values beyond which damage to the device may TO-243AA (SOT-89) occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking Typical Thermal Resistance W = Code for Week Sealed TN4CW = Green Packaging Package ja Package may or may not include the following marks: Si or O TO-243AA (SOT-89) 133 C/W TO-243AA (SOT-89) Doc. DSFP-TN2425 Supertex inc. B080913 www.supertex.comTN2425 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM T = 25 C (continuous) (pulsed) C TO-243AA (SOT-89) 480mA 1.90A 1.6W 480mA 1.90A Notes: I (continuous) is limited by max rated T . D j T = 25C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P increase possible on ceramic substrate. A D O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 250 - - V V = 0V, I = 250A DSS GS D V Gate threshold voltage 0.8 - 2.5 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8Max Rating, DSS DS - - 1.0 mA O V = 0V, T = 125 C GS A 0.8 - - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 1.5 - - V = 10V, V = 25V GS DS - - 6.0 V = 3.0V, I = 150mA GS D R Static drain-to-source on-state resistance - - 5.0 V = 4.5V, I = 250mA DS(ON) GS D - - 3.5 V = 10V, I = 500mA GS D O R Change in R with temperature - - 1.7 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transductance 500 - - mmho V = 25V, I = 250mA FS DS D C Input capacitance - 105 200 ISS V = 0V, GS C Common source output capacitance - 25 100 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 7.0 40 RSS t Turn-on delay time - 5.0 15 d(ON) V = 25V, DD t Rise time - 10 25 r ns I = 500mA, D t Turn-off delay time - 25 35 d(OFF) R = 25 GEN t Fall time - 5.0 15 f V Diode forward voltage drop - - 1.5 V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V VDD 90% INPUT Pulse R L 10% Generator OUTPUT 0V t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 0V 90% 90% Doc. DSFP-TN2425 Supertex inc. B080913 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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