TN5325 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (2.0V max.) This low threshold, enhancement-mode (normally-off) High input impedance and high gain transistor utilizes a vertical DMOS structure and Supertexs well-proven, silicon-gate manufacturing process. This Free from secondary breakdown combination produces a device with the power handling Low C and fast switching speeds ISS capabilities of bipolar transistors and the high input impedance Applications and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free Logic level interfaces - ideal for TTL and CMOS from thermal runaway and thermally-induced secondary Solid state relays breakdown. Battery operated systems Photo voltaic drives Supertexs vertical DMOS FETs are ideally suited to a wide Analog switches range of switching and amplifying applications where very General purpose line drivers low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds Telecom switches are desired. Ordering Information R I V Package Options DS(ON) D(ON) GS(th) BV /BV DSS DGS Device (max) (min) (max) (V) TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) () (A) (V) TN5325 TN5325K1-G TN5325N3-G TN5325N8-G 250 7.0 1.2 2.0 -G indicates package is RoHS compliant (Green) Pin Congurations Absolute Maximum Ratings DRAIN DRAIN Parameter Value SOURCE Drain-to-source voltage BV DSS SOURC E Drain-to-gate voltage BV DGS GATE GATE Gate-to-source voltage 20V TO-236AB (SOT-23) (K1) TO-92 (N3) O O Operating and storage temperature -55 C to +150 C DRAIN O Soldering temperature* 300 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous SOURCE operation of the device at the absolute rating level may affect device reliability. All DRAIN voltages are referenced to device ground. GATE * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) Product Marking S i T N YY = Year Sealed 5 3 2 5 WW = Week Sealed W = Code for week sealed W = Code for week sealed T N 3 C W N 3 C W Y Y W W = Green Packaging = Green Packaging = Green Packaging TO-236AB (SOT-23) (K1) TO-92 (N3) TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN5325 Thermal Characteristics I I Power Dissipation D D I I O jc ja DR DRM Package T = 25 C (continuous) (pulsed) A O O ( C/W) ( C/W) (mA) (A) (A) (W) (mA) TO-236AB (SOT-23) 150 0.4 0.36 200 350 150 0.4 TO-92 215 0.8 0.74 125 170 215 0.8 TO-243AA (SOT-89) 316 1.5 1.6 15 78 316 1.5 Notes: I (continuous) is limited by max rated T . D j Mounted on FR5 Board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 250 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.6 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -4.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 V = 0V, V = 100V GS DS A - - 10 V = 0V, V = Max Rating GS DS I Zero gate voltage drain current DSS V = 0.8 Max Rating, DS - - 1.0 mA V = 0V, T = 125C GS A 0.6 - - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 1.2 - - V = 10V, V = 25V GS DS - - 8.0 V = 4.5V, I = 150mA Static drain-to-source GS D R DS(ON) on-state resistance - - 7.0 V = 10V, I = 1.0A GS D O R Change in R with temperature - - 1.0 %/ C V = 4.5V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 150 - - mmho V = 25V, I = 200mA FS DS D C Input capacitance - - 110 ISS V = 0V, GS C Common source output capacitance - - 60 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 23 RSS t Turn-on delay time - - 20 d(ON) V = 25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 25 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 200mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2