TN2435 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven, silicon-gate manufacturing process. This Low input capacitance combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this Low input and output leakage device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Logic level interfaces - ideal for TTL and CMOS wide range of switching and amplifying applications where Solid state relays very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching Battery operated systems speeds are desired. Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R I Package Option DS(ON) D(ON) BV /BV DSS DGS Device (max) (min) (V) TO-243AA (SOT-89) () (A) TN2435 TN2435N8-G 350 6.0 1.0 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN SOURCE Absolute Maximum Ratings DRAIN GATE Parameter Value TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V W = Code for week sealed O O Operating and storage temperature -55 C to +150 C T N 4 S W = Green Packaging O Soldering temperature* 300 C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device TO-243AA (SOT-89) (N8) may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTN2435 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA (SOT-89) 365 1.8 1.6 15 78 365 1.8 Notes: I (continuous) is limited by max rated T . D j Mounted on FR5 Board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 350 - - V V = 0V, I = 250A DSS GS D V Gate threshold voltage 0.8 - 2.5 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -5.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current V = 0.8Max Rating, DSS DS - - 1.0 mA V = 0V, T = 125C GS A 0.5 - - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 1.0 - - V = 10V, V = 25V GS DS - - 15 V = 3.0V, I = 150mA GS D R Static drain-to-source on-state resistance - - 10 V = 4.5V, I = 250mA DS(ON) GS D - - 6.0 V = 10V, I = 750mA GS D O R Change in R with temperature - - 1.7 %/ C V = 10V, I = 750mA DS(ON) DS(ON) GS D G Forward transductance 125 - - mmho V = 20V, I = 350mA FS DS D C Input capacitance - 125 200 ISS V = 0V, GS C Common source output capacitance - 25 70 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 8.0 25 RSS t Turn-on delay time - 5.0 20 d(ON) V = 25V, DD t Rise time - 10 20 r ns I = 750mA, D t Turn-off delay time - 28 40 d(OFF) R = 25 GEN t Fall time - 10 30 f V Diode forward voltage drop - - 1.5 V V = 0V, I = 750mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 750mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 10V 90% R L INPUT PULSE GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPUT OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2