MDF9N60B N-channel MOSFET 600V MDF9N60B N-Channel MOSFET 600V, 9A, 0.80 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChips MOSFET Technology, which provides low on- I = 9.0A V = 10V D GS state resistance, high switching performance and excellent R 0.80 V = 10V DS(ON) GS quality. Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching G D S o Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-Source Voltage V 600 V DSS Gate-Source Voltage V 30 V GSS o T =25 C 9.0* A C Continuous Drain Current() I D o T =100 C 5.7* A C (1) Pulsed Drain Current I 32* A DM o T =25 C 48 C W Power Dissipation P o D o W/ C Derate above 25 C 0.38 (1) Repetitive Avalanche Energy E 4.8 mJ AR (3) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (4) Single Pulse Avalanche Energy E 480 mJ AS o Junction and Storage Temperature Range T , T -55~150 C J stg Id limited by maximum junction temperature Thermal Characteristics Characteristics Symbol Rating Unit (1) Thermal Resistance, Junction-to-Ambient R 62.5 JA o C/W (1) Thermal Resistance, Junction-to-Case R 2.62 JC 1 Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd. MDF9N60B N-channel MOSFET 600V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDF9N60BTH -55~150 C TO-220F Tube Halogen Free o Electrical Characteristics (Ta =25 C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 600 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 2.0 - 4.0 GS(th) DS GS D Drain Cut-Off Current I V = 600V, V = 0V - - 1 A DSS DS GS Gate Leakage Current I V = 30V, V = 0V - - 100 nA GSS GS DS Drain-Source ON Resistance R V = 10V, I = 4.5A 0.65 0.80 DS(ON) GS D Forward Transconductance g V = 30V, I = 4.5A - 7.0 - S fs DS D Dynamic Characteristics Total Gate Charge Q - 23.9 g (3) Gate-Source Charge Q V = 480V, I = 9.0A, V = 10V - 5.1 nC gs DS D GS Gate-Drain Charge Q - 8.3 gd Input Capacitance C - 1226 iss Reverse Transfer Capacitance C V = 25V, V = 0V, f = 1.0MHz - 6.2 pF rss DS GS Output Capacitance C - 134 oss Turn-On Delay Time t - 21.5 d(on) Rise Time t - 33.4 r V = 10V, V = 300V, I = 9.0A, GS DS D ns (3) R = 25 G Turn-Off Delay Time t - 100.3 d(off) Fall Time t - 41.6 f Drain-Source Body Diode Characteristics Maximum Continuous Drain to I - 9 - A S Source Diode Forward Current Source-Drain Diode Forward V I = 9.0A, V = 0V - 1.4 V SD S GS Voltage Body Diode Reverse Recovery t - 360 ns rr Time (3) I = 9.0A, dl/dt = 100A/s F Body Diode Reverse Recovery Q - 3.9 C rr Charge Note : 1. Pulse width is based on R & R and the maximum allowed junction temperature of 150C. JC JA 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature T =150C. J(MAX) 3. I 9.0A, di/dt200A/us, V BV , R =25, Starting T =25C SD DD DSS g J 4. L=10.8mH, I =9.0A, V =50V, R =25, Starting T =25C, AS DD g J 2 Jan. 2012 Version 1.0 MagnaChip Semiconductor Ltd.