MCP87022T-U/MF Microchip

MCP87022 High-Speed N-Channel Power MOSFET Features: Description Low Drain-to-Source On Resistance (R ) The MCP87022 is an N-Channel power MOSFET in a DS(ON) popular PDFN 5mmx6mm package. Advanced Low Total Gate Charge (Q ) and Gate-to-Drain G Charge (Q ) packaging and silicon processing technologies allow GD the MCP87022 to achieve a low Q for a given R Low Series Gate Resistance (R ) G DS(on) G value, resulting in a low Figure of Merit (FOM). Fast Switching Combined with low R , the low Figure of Merit of the Capable of Short Dead-Time Operation G MCP87022 allows high efficiency power conversion ROHS Compliant with reduced switching and conduction losses. Applications Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking and Automotive Applications Package Type PDFN 5 x 6 8 S 1 D S 2 7 D S 6 3 D 5 G 4 D Product Summary Table: Unless otherwise indicated, T = +25C A Parameters SymMinTypMaxUnits Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 11.3 1.6 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 2.2 2.6 m V = 4.5V, I = 25A DS(ON) GS D 1.9 2.3 m V = 10V, I = 25A GS D Total Gate Charge Q 25.5 29 nC V = 12.5V, I = 25A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 9 nC V = 12.5V, I = 25A GD DS D Series Gate Resistance R 1.3 G Thermal Characteristics Thermal Resistance Junction-to-X R 56 C/W Note 1 JX Thermal Resistance Junction-to-Case R 1.6 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of JX 2 oz. copper. This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2012 Microchip Technology Inc. DS25133B-page 1MCP87022 Notice: Stresses above those listed under 1.0 ELECTRICAL Maximum Ratings may cause permanent damage to CHARACTERISTICS the device. This is a stress rating only and functional operation of the device at those or any other conditions Absolute Maximum Ratings above those indicated in the operational sections of this specification is not intended. Exposure to maximum V .......................................................................+25V DS rating conditions for extended periods may affect V ........................................................... +10.0V / -8V GS device reliability. I Continuous ....................................100A, T = 25C D, C P ..................................................... 2.2W, T = +25C D A T , T .............................................. -55C to +150C J STG E Avalanche Energy..................................... 450 mJ AS I =30A, L= 1mH, R =25 D G DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C A Parameters SymMinTypMaxUnits Conditions Static Characteristics Drain-to-Source B 25 V V = 0V, I = 250 A VDSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 11.3 1.6 V V = V , I = 250 A GS(TH) DS GS D 2.2 2.6 m V = 4.5V, I = 25 A Drain-to-Source On Resistance R DS(ON) GS D 1.9 2.3 m V = 10V, I = 25 A GS D Transconductance g 155 S V = 12.5V, I = 25A fs DS D Dynamic Characteristics Input Capacitance C 2310 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 1080 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS 285 pF V = 0V, V = 12.5V, f = 1 MHz Reverse Transfer Capacitance C RSS GS DS Total Gate Charge Q 25.5 29 nC V = 12.5V, I = 25 A, G DS D V = 4.5V GS 9 nCV = 12.5V, I = 25 A Gate-to-Drain Charge Q GD DS D Gate-to-Source Charge Q 4.5 nC V = 12.5V, I = 25 A GS DS D Gate Charge at V Q 3.3 nC V = 12.5V, I = 25 A GS(TH) G(TH) DS D 21 nC V = 12.5V, V = 0 Output Charge Q OSS DS GS Turn-On Delay Time t 7.6 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 25A, R = 2 D G Rise Time t 27 ns V = 12.5V, V = 4.5V, r DS GS I = 25A, R = 2 D G Turn-Off Delay Time t 21 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 25A, R = 2 D G Fall Time t 17 ns V = 12.5V, V = 4.5V, f DS GS I = 25A, R = 2 D G Series Gate Resistance R 1.3 G DS25133B-page 2 2012 Microchip Technology Inc.