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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 7 0 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 0 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and Low Crss (Typ. 47 0 pF) high avalanche energy strength. These devices are suitable 100% Avalanche Tested for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 17 D G G D TO-3PN S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQA140N10 Unit V Drain-Source Voltage 100 V DSS I Drain Current - Continuous (T = 25C) 140 A D C - Continuous (T = 100C) 99 A C I Drain Current - Pulsed (Note 1) 560 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 1500 mJ AS I (Note 1) Avalanche Current 140 A AR E Repetitive Avalanche Energy (Note 1) 37.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.5 V/ns P Power Dissipation (T = 25C) 375 W D C - Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics FQA140N10 + Thermal Resistance, Junction-to-Case, Max. 0.4 6 + 40 6 Thermal Resistance, Junction-to-Ambient, Max. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA140N10 Rev. C2