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V = 10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = 5.25 A D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 28 nC) technology has been especially tailored to minimize on- Low Crss (Typ. 85 pF) state resistance, provide superior switching performance, 100% Avalanche Tested and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D G G 2 S D -PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQB11N40CTM Unit V Drain-Source Voltage 400 V DSS I - Continuous (T = 25C) Drain Current 10.5 A D C - Continuous (T = 100C) 6.6 A C I (Note 1) Drain Current - Pulsed 42 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 360 mJ AS I Avalanche Current (Note 1) 11 A AR E Repetitive Avalanche Energy (Note 1) 13.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 135 W D C - Derate above 25C 1.07 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB11N40CTM Unit R Thermal Resistance, Junction to Case, Max. 0.93 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in pad of 2 oz copper), Max. 40 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB11N40C Rev. C0