ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQB22P10TM -F085 100V P-Channel MOSFET FQB22P10TM-F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect V = -10 V -22A, -100V, R = 0.125 GS DS(on) transistors are produced using ON Semiconductor ) Low gate charge ( typical 40 nC proprietary, planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well p 175C maximum junction tem erature rating suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor Qualified to AEC Q101 control. RoHS Compliant D D G 2 D -PAK GS FQB Series Absolute Maximum Ratings T = 25C unless otherwise noted S C Symbol Parameter FQB22P10TM F085 Units V Drain-Source Voltage -100 V DSS I - Continuous (T = 25C) Drain Current -22 A D C - Continuous (T = 100C) -15.6 A C I Drain Current - Pulsed (Note 1) -88 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 710 mJ AS I Avalanche Current (Note 1) -22 A AR E Repetitive Avalanche Energy (Note 1) 12.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -6.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 125 W C - Derate above 25C 0.83 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.2 C/W JC R Thermal Resistance, Junction-to-Ambient * -- 40 C/W JA R Thermal Resistance, Junction-to-Ambient -- 62.5 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) Publication Order Number: 2009 Semiconductor Components Industries, LLC. September-2017, Rev. 1 FQB22P10TM-F085/D