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FQB33N10L N-Channel QFET MOSFET October 2013 FQB33N10L N-Channel QFET MOSFET 100 V, 33 A, 52 m Description Features This N-Channel enhancement mode power MOSFET is 33 A, 100 V, R = 52 m (Max) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 16 .5 A D stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 30 nC) resistance, and to provide superior switching performance Low Crss (Typ. 70 pF) and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, 100% Avalanche Tested DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQB33N10LTM Unit V Drain-Source Voltage 100 V DSS I Drain Current - Continuous (T = 25C) 33 A D C - Continuous (T = 100C) 23 A C I Drain Current - Pulsed (Note 1) 132 A DM V Gate-Source Voltage 20 V GSS E Single Pulsed Avalanche Energy (Note 2) 430 mJ AS I (Note 1) Avalanche Current 33 A AR E Repetitive Avalanche Energy (Note 1) 12.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * P 3.75 W A D Power Dissipation (T = 25C) 127 W C - Derate above 25C 0.85 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQB33N10LTM Symbol Parameter Unit R Thermal Resistance, Junction to Case, Max 1.18 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB33N10L Rev. 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