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FQB33N10 N-Channel QFET MOSFET October 2013 FQB33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 m Description Features This N-Channel enhancement mode power MOSFET is 3 3 A, 100 V, R = 52 m (Max) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 16 .5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge ( Typ. 38 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss ( Typ. 62 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQB33N10TM Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 33 A D C - Continuous (T = 100C) 23 A C I (Note 1) Drain Current - Pulsed 132 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 435 mJ AS I Avalanche Current (Note 1) 33 A AR E (Note 1) Repetitive Avalanche Energy 12.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 127 W C - Derate above 25C 0.85 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB33N10TM Unit R Thermal Resistance, Junction to Case, Max . 1.18 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB33N10 Rev. C1