FQB50N06 / FQI50N06 N-Channel QFET MOSFET October 2013 FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 m Description Features This N-Channel enhancement mode power MOSFET is 5 0 A , 60 V, R = 2 2 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 2 5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 31 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 65 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. 175C Maximum Junction Temperature Rating D D G G G 2 2 D S I -PAK S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQB50N06TM / FQI50N06TU Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 50 A D C - Continuous (T = 100C) 35.4 A C I Drain Current - Pulsed (Note 1) 200 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 490 mJ AS I Avalanche Current (Note 1) 50 A AR E Repetitive Avalanche Energy (Note 1) 12 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 7.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 120 W C - Derate above 25C 0.8 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQB50N06TM Symbol Parameter Unit FQI50N06TU R Thermal Resistance, Junction to Case, Max . 1.24 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 1 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com FQB50N06 / FQI50N06 Rev. C1 FQB50N06 / FQI50N06 N-Channel QFET MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQB50N06 FQB50N06TM D 2-PAK 330mm 24mm 800 FQI50N06 FQI50N06TU I 2-PAK - - 50 Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.06 -- V/C D / T Coefficient J I V = 60 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 48 V, T = 150C -- -- 10 A DS C I V = 25 V, V = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA GSSF GS DS I V = -25 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 25 A -- 0.018 0.022 GS D On-Resistance g Forward Transconductance V = 25 V, I = 25 A -- 22 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 1180 1540 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 440 580 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 65 90 pF rss Switching Characteristics t Turn-On Delay Time -- 15 40 ns d(on) V = 30 V, I = 25 A, DD D t Turn-On Rise Time -- 105 220 ns r R = 25 G t Turn-Off Delay Time -- 60 130 ns d(off) (Note 4) t Turn-Off Fall Time -- 65 140 ns f Q Total Gate Charge -- 31 41 nC g V = 48 V, I = 50 A, DS D Q Gate-Source Charge -- 8 -- nC gs V = 10 V GS (Note 4) Q Gate-Drain Charge -- 13 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 50 A -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 50 A, -- 52 -- ns rr GS S dI / dt = 100 A/s Q Reverse Recovery Charge -- 75 -- nC F rr Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230 H, I = 50A, V = 25V, R = 25 , Starting T = 25C AS DD G J 3. I 50A, di/dt 300A/ s, V BV Starting T = 25C SD DD DSS, J 4. Essentially independent of operating temperature 2 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com FQB50N06 / FQI50N06 Rev. C1