FQB55N10 N-Channel QFET MOSFET November 2013 FQB55N10 N-Channel QFET MOSFET 100 V, 55 A, 26 m Description Features This N-Channel enhancement mode power MOSFET is 55 A, 100 V, R = 26 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 27.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 75 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 130 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. 175C Maximum Junction Temperature Rating D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB55N10 TM Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 55 A D C - Continuous (T = 100C) 38.9 A C I (Note 1) Drain Current - Pulsed 220 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 55 A AR E Repetitive Avalanche Energy (Note 1) 15.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * P 3.75 W A D Power Dissipation (T = 25C) 155 W C - Derate above 25C 1.03 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQB55N10TM R Thermal Resistance, Junction to Case, Max. 0.97 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 40 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB55N10 Rev. C1 FQB55N10 N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 2 FQB55N10 D -PAK Tape and Reel 330 mm 24 mm 800 units FQB55N10TM Electrical Characteristics T = 25C unless otherwise noted. C Symbol Parameter Test Conditions Min . Typ . Max . Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 100 -- -- V DSS GS D BV DSS Breakdown Voltage Temperature I = 250 A, Referenced to 25C -- 0.1 -- V/C D / T Coefficient J I V = 100 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 80 V, T = 150C -- -- 10 A DS C I V = 25 V, V = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA GSSF GS DS I V = -25 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 27.5 A -- 0.021 0.026 GS D On-Resistance g V = 40 V, I = 27.5 A Forward Transconductance -- 38 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 2100 2730 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 640 830 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 130 170 pF rss Switching Characteristics t Turn-On Delay Time -- 25 60 ns d(on) V = 50 V, I = 55 A, DD D t Turn-On Rise Time -- 250 510 ns r R = 25 G t Turn-Off Delay Time -- 110 230 ns d(off) (N ote 4) t Turn-Off Fall Time -- 140 290 ns f Q Total Gate Charge -- 75 98 nC g V = 80 V, I = 55 A, DS D Q Gate-Source Charge -- 13 -- nC gs V = 10 V GS (Note 4) Q Gate-Drain Charge -- 36 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A SM V V = 0 V, I = 55 A Drain-Source Diode Forward Voltage -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 55 A, -- 100 -- ns rr GS S Q dI / dt = 100 A/s Reverse Recovery Charge -- 380 -- nC rr F Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.55 mH, I = 55 A, V = 25 V, R = 25 , starting T = 25C. AS DD G J 3. I 55 A, di/dt 300 A/s , V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQB55N10 Rev. C1