X-On Electronics has gained recognition as a prominent supplier of FQB7P20TM_F085 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQB7P20TM_F085 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQB7P20TM_F085 ON Semiconductor

FQB7P20TM_F085 electronic component of ON Semiconductor
FQB7P20TM_F085 ON Semiconductor
FQB7P20TM_F085 MOSFETs
FQB7P20TM_F085  Semiconductors

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Part No. FQB7P20TM_F085
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 200V P-Channel QFET
Datasheet: FQB7P20TM_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
344: USD 1.4206 ea
Line Total: USD 488.69 
Availability - 5432
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ: 344  Multiples: 344
Pack Size: 344
Availability Price Quantity
5432
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 344
Multiples : 344
344 : USD 1.4206
500 : USD 1.3602
1000 : USD 1.2845

   
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Rds On - Drain-Source Resistance
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We are delighted to provide the FQB7P20TM_F085 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQB7P20TM_F085 and other electronic components in the MOSFETs category and beyond.

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FQD12N20LTM F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28 V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. Qualified to AEC Q101 RoHS Compliant D D-PAK G S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQD12N20LTM F085 Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 9.0 A D C - Continuous (T = 100C) 5.7 A C I Drain Current - Pulsed (Note 1) 36 A DM V Gate-Source Voltage 20 V GSS I Avalanche Current (Note 1) 9.0 A AR (Note 2) dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 55 W C - Derate above 25C 0.44 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.27 C/W JC R Thermal Resistance, Junction-to-Ambient * -- 50 C/W JA R Thermal Resistance, Junction-to-Ambient -- 110 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQD12N20LTM F085 Rev. BFQD12N20LTM F085 200V Logic Level N-Channel MOSFET Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.14 -- V/C D / T Coefficient J I V = 200 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 160 V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 20 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -20 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 1.0 -- 2.0 V GS(th) DS GS D V = 10 V, I = 4.5 A R Static Drain-Source GS D 0.22 0.28 DS(on) -- On-Resistance V = 5 V, I = 4.5 A 0.25 0.32 GS D (Note 3) g V = 30 V, I = 4.5 A Forward Transconductance -- 11.6 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 830 1080 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 120 155 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 17 22 pF rss Switching Characteristics t Turn-On Delay Time -- 15 40 ns d(on) V = 100 V, I = 11.6 A, DD D t Turn-On Rise Time -- 190 390 ns r R = 25 G t Turn-Off Delay Time -- 60 130 ns d(off) (Note 3, 4) t Turn-Off Fall Time -- 120 250 ns f Q Total Gate Charge -- 16 21 nC g I A, V = 160 V, = 11.6 DS D Q Gate-Source Charge -- 2.8 -- nC gs V = 5 V GS (Note 3, 4) Q Gate-Drain Charge -- 7.6 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A SM V V = 0 V, I = 9.0 A Drain-Source Diode Forward Voltage -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 11.6 A, -- 128 -- ns rr GS S (Note 3) dI / dt = 100 A/s Q Reverse Recovery Charge -- 0.56 -- C rr F Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I 11.6A, di/dt 300A/ s, V BV Starting T = 25C SD DD DSS, J 3. Pulse Test : Pulse width 300 s, Duty cycle 2% 4. Essentially independent of operating temperature FQD12N20LTM F085 Rev. B 2 www.fairchildsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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