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V = 10 V, This N-Channel enhancement mode power MOSFET is DS(on) GS I = 8 A D produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 41 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 68 pF) technology has been especially tailored to reduce on-state 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G S D-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD16N25CTM Unit V 250 Drain-Source Voltage V DSS 16 Drain Current - Continuous (T = 25C) A C I D - Continuous (T = 100C) 10.1 A C 64 I Drain Current - Pulsed (Note 1) A DM V 30 Gate-Source Voltage V GSS 432 E Single Pulsed Avalanche Energy (Note 2) mJ AS I (Note 1) 16 Avalanche Current A AR E 160 Repetitive Avalanche Energy (Note 1) mJ AR 5.5 dv/dt Peak Diode Recovery dv/dt (Note 3) V/ns Power Dissipation (T = 25C) 160 W C P D 1.28 - Derate above 25C W/C T , T -55 to +150 Operating and Storage Temperature Range C J STG Maximum lead temperature for soldering purposes, 300 T C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQD16N25CTM Unit R Thermal Resistance, Junction-to-Case, Max. 0.78 JC C/W R Thermal Resistance, Junction-to-Ambient, Max. 110 JA 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD16N25C Rev. C1