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V = -10 V, DS(on) GS transistors are produced using Fairchilds proprietary, I = -4.7 A D planar stripe, DMOS technology. This advanced Low Gate Charge (Typ. 29 nC) technology is especially tailored to minimize on-state Low Crss (Typ. 27 pF) resistance, provide superior switching performance, and 100% Avalanche Tested withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. S D G G 2 S D -PAK D o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQB9P25TM Unit V Drain-Source Voltage -250 V DSS I - Continuous (T = 25C) Drain Current -9.4 A D C - Continuous (T = 100C) -5.9 A C I (Note 1) Drain Current - Pulsed -37.6 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 650 mJ AS I Avalanche Current (Note 1) -9.4 A AR E (Note 1) Repetitive Avalanche Energy 12 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns Power Dissipation (T = 25C) * 3.13 W P A D Power Dissipation (T = 25C) 120 W C - Derate above 25C 0.96 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB9P25TM Unit R Thermal Resistance, Junction to Case, Max. 1.04 JC o Thermal Resistance, Junction to Ambient ( Minimum Pad of 2 -oz Copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB9P25 Rev. 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