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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD13N10 N-Channel QFET MOSFET November 2013 FQD13N10 N-Channel QFET MOSFET 100 V, 10 A, 180 m Description Features This N-Channel enhancement mode power MOSFET is 10 A, 100 V, R = 180 m (Max.) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 5 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 12 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching Low Crss (Typ. 20 pF) performance and high avalanche energy strength. These 100% Avalanche Tested devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. D D G G S D-PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD13N10 TM Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 10 A D C - Continuous (T = 100C) 6.3 A C I Drain Current - Pulsed (Note 1) 40 A DM V Gate-Source Voltage 25 V GSS E Single Pulsed Avalanche Energy (Note 2) 95 mJ AS I Avalanche Current (Note 1) 10 A AR E Repetitive Avalanche Energy (Note 1) 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 40 W C - Derate above 25C 0.32 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L .1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQD13N10TM R Thermal Resistance, Junction to Case, Max. 3.13 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD13N10 Rev. 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