X-On Electronics has gained recognition as a prominent supplier of FQD12N20L MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQD12N20L MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQD12N20L ON Semiconductor

FQD12N20L electronic component of ON Semiconductor
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Part No.FQD12N20L
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; 2.5W; DPAK
Datasheet: FQD12N20L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8971 ea
Line Total: USD 0.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8971
3 : USD 0.4825
10 : USD 0.4252
41 : USD 0.3545
111 : USD 0.3343

   
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Mounting
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Features Of Semiconductor Devices
Type Of Transistor
On-State Resistance
Drain Current
Drain-Source Voltage
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the FQD12N20L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD12N20L and other electronic components in the MOSFETs category and beyond.

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FQD12N20L / FQU12N20L January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, R = 0.28 V = 10 V DS(on) GS transistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well Low level gate drive requirement allowing direct suited for high efficiency switching DC/DC converters, opration from logic drivers switch mode power supply, motor control. RoHS Compliant D D G D-PAK I-PAK G S G FQD Series FQU Series D S S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQD12N20L / FQU12N20L Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25C) Drain Current 9.0 A D C - Continuous (T = 100C) 5.7 A C I (Note 1) Drain Current - Pulsed 36 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 210 mJ AS I Avalanche Current (Note 1) 9.0 A AR E (Note 1) Repetitive Avalanche Energy 5.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 55 W C - Derate above 25C 0.44 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.27 C/W JC R Thermal Resistance, Junction-to-Ambient * -- 50 C/W JA R Thermal Resistance, Junction-to-Ambient -- 110 C/W JA * When mounted on the minimum pad size recommended (PCB Mount) 2009 Fairchild Semiconductor Corporation Rev. A2, January 2009FQD12N20L / FQU12N20L Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 200 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.14 -- V/C D / T Coefficient J I V = 200 V, V = 0 V -- -- 1 A DSS DS GS Zero Gate Voltage Drain Current V = 160 V, T = 125C -- -- 10 A DS C I Gate-Body Leakage Current, Forward V = 20 V, V = 0 V -- -- 100 nA GSSF GS DS I V = -20 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 1.0 -- 2.0 V GS(th) DS GS D V = 10 V, I = 4.5 A R Static Drain-Source GS D 0.22 0.28 DS(on) -- On-Resistance V = 5 V, I = 4.5 A 0.25 0.32 GS D (Note 4) g V = 30 V, I = 4.5 A Forward Transconductance -- 11.6 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 830 1080 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 120 155 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 17 22 pF rss Switching Characteristics t Turn-On Delay Time -- 15 40 ns d(on) V = 100 V, I = 11.6 A, DD D t Turn-On Rise Time -- 190 390 ns r R = 25 G t Turn-Off Delay Time -- 60 130 ns d(off) (Note 4, 5) t Turn-Off Fall Time -- 120 250 ns f Q Total Gate Charge -- 16 21 nC g V = 160 V, I = 11.6 A, DS D Q Gate-Source Charge -- 2.8 -- nC gs V = 5 V GS (Note 4, 5) Q Gate-Drain Charge -- 7.6 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A SM V V = 0 V, I = 9.0 A Drain-Source Diode Forward Voltage -- -- 1.5 V SD GS S t Reverse Recovery Time V = 0 V, I = 11.6 A, -- 128 -- ns rr GS S (Note 4) dI / dt = 100 A/s Q Reverse Recovery Charge -- 0.56 -- C rr F Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.9mH, I = 9.0A, V = 50V, R = 25 , Starting T = 25C AS DD G J 3. I 11.6A, di/dt 300A/ s, V BV Starting T = 25C SD DD DSS, J 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature 2009 Fairchild Semiconductor Corporation Rev. A2, January 2009

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