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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 27.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 75 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 130 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. 175C Maximum Junction Temperature Rating D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB55N10 TM Unit V Drain-Source Voltage 100 V DSS I - Continuous (T = 25C) Drain Current 55 A D C - Continuous (T = 100C) 38.9 A C I (Note 1) Drain Current - Pulsed 220 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 1100 mJ AS I Avalanche Current (Note 1) 55 A AR E Repetitive Avalanche Energy (Note 1) 15.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns Power Dissipation (T = 25C) * P 3.75 W A D Power Dissipation (T = 25C) 155 W C - Derate above 25C 1.03 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQB55N10TM R Thermal Resistance, Junction to Case, Max. 0.97 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 40 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB55N10 Rev. 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