ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FQD2N60C / FQU2N60C N-Channel QFET MOSFET FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Description Features This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar 1.9 A, 600 V, R = 4.7 (Max.) V = 10 V, DS(on) GS stripe and DMOS technology. This advanced MOSFET I = 0.95 A D technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 8.5 nC) resistance, and to provide superior switching performance Low Crss (Typ. 4.3 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power RoHSCompliant factor correction (PFC), and electronic lamp ballasts. D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD2N60CTM / FQU2N60CTU Unit V 600 V Drain-Source Voltage DSS 1.9 A Drain Current - Continuous (T = 25C) C I D - Continuous (T = 100C) 1.14 A C 7.6 A I Drain Current - Pulsed (Note 1) DM V 30 V Gate-Source Voltage GSS 120 mJ E Single Pulsed Avalanche Energy (Note 2) AS I (Note 1) 1.9 A Avalanche Current AR E 4.4 mJ Repetitive Avalanche Energy (Note 1) AR 4.5 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) Power Dissipation (T = 25C)* 2.5 W A P Power Dissipation (T = 25C) 44 W D C 0.35 W/C - Derate above 25C T , T -55 to +150 C Operating and Storage Temperature Range J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics FQD2N60CTM / Symbol Parameter Unit FQU2N60CTU R Thermal Resistance, Junction-to-Case, Max. 2.87 JC Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max. 110 C/W R JA 2 50 Thermal Resistance, Junction-to-Ambient (* 1 in pad of 2 oz copper), Max. 2003 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev.2 FQU2N60C/D