X-On Electronics has gained recognition as a prominent supplier of FQD2N80TM MOSFET across the USA, India, Europe, Australia, and various other global locations. FQD2N80TM MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FQD2N80TM ON Semiconductor

FQD2N80TM electronic component of ON Semiconductor
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See Product Specifications
Part No.FQD2N80TM
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET 800V N-Channel QFET
Datasheet: FQD2N80TM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.871 ea
Line Total: USD 1.87

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.6761

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3962

0
Ship by Thu. 01 Aug to Wed. 07 Aug

Multiples : 1

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.326
10 : USD 1.1778
100 : USD 0.9282
500 : USD 0.7199
1000 : USD 0.5686

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.3435
5000 : USD 0.3435
7500 : USD 0.3435
10000 : USD 0.3435

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 839
Multiples : 1
839 : USD 0.3885

0
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3785
10 : USD 1.1891
30 : USD 1.0841
100 : USD 0.9678
500 : USD 0.9153
1000 : USD 0.8909

0
Ship by Wed. 07 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 3.12
10 : USD 1.1723
100 : USD 0.8736
500 : USD 0.7221
1000 : USD 0.5705
2500 : USD 0.536

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 17
Multiples : 1
17 : USD 0.6689

0
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 17
Multiples : 1
17 : USD 0.6268
25 : USD 0.5182
100 : USD 0.5079

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
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We are delighted to provide the FQD2N80TM from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQD2N80TM and other electronic components in the MOSFET category and beyond.

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The FQD2N80TM with MOSFET 800V N-Channel QFET is a power MOSFET manufactured ON Semiconductor. It is a dual N-channel enhancement type MOSFET designed for improved surface mount switching applications and is ideal for low impedance applications. Featuring a breakdown voltage of 800V, the FQD2N80TM has fast switching speed with low gate charge, allowing faster switching times and higher drive currents in most applications. Additionally, its maximum RDS(ON) of 1.4mOhm, and its toggle mode in enhanced Gate D-S resistance allows higher Power Conversion Efficiency. This device is available in TO-252 (DPAK) package option making it suitable for power management applications, such as switching motor controls, regulators, and load switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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