FQU4N50TU WS N-Channel QFET MOSFET November 2013 FQU4N50TU WS N-Channel QFET MOSFET 500 V, 2.6 A, 2.7 Description Features This N-Channel enhancement mode power MOSFET is 2.6 A, 500 V, R = 2.7 (Max .) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary I = 1.3 A D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 10 nC) MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior Low Crss (Typ. 6.0 pF) switching performance and high avalanche energy 100% Avalanche Tested strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S I-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C FQU4N50TU WS * * ()) * 4 1 , %(6 2 % & 1 , /))6 2 / &7 4 8 /) 7 * 9 * :) * 8 %&) < 4 % & + 7 ( < 5 8 = + 5 7 ( *5 8 1 , %(6 2 > % ( 8 8 1 , %(6 2 7( %(6 ) :& 56 + (( /() 6 Maximum Lead Temperature for Soldering, :)) 6 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQU4N50TU WS Unit R Thermal Resistance, Junction to Case, Max . 2.78 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 www.fairchildsemi.com 200 9 Fairchild Semiconductor Corporation 1 FQU4N50TU WS Rev. C1 FQU4N50TU WS N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FQU4N50TU WS FQU4N50 S IPAK N/A N/A 75 units Tube o Electrical Characteristics T = 25 C unless otherwise noted. C a . C* * , ) * 4 , %() C = * ()) * C* C = * 4 , %() + %(6 ) :B *56 5 4 * , ()) * * , ) * / D 9 * * , 7)) * , /%(6 /) 4 * , :) * * , ) * 9 C 0 = /)) 4 * , :) * * , ) * 9 C 0 = + /)) * * , * 4 , %() 9 * : ) ( ) * + * , /) * 4 , / : % ) % - + * , () * 4 , / : % & 4 :() 7&) * , %( * * , ) * (( -) , / ) E + & B /% :) * , %() * 4 , : 7 + 7( /)) + , %( %) () (Note 4) :) -) F 9 /) /: V = 400 V, I = 3.4 A, DS D F 9 V = 10 V % ( GS (Note 4) F 9 7 - 4 A % & 4 A 8 /) 7 * * , ) * 4 , % & * / 7 * * , ) * 4 , : 7 + + %/) F 4 5 , /)) 5 + + / /( Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 68 mH, I = 2.6 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 3.4 A, di/dt 200 A/s , V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 200 9 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQU4N50TU WS Rev. C1