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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 6.25 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 45 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 25 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D S TO-220 S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQP13N50 Unit V Drain-Source Voltage 500 V DSS I - Continuous (T = 25C) Drain Current 12.5 A D C - Continuous (T = 100C) 7.9 A C I (Note 1) Drain Current - Pulsed 50 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 810 mJ AS I Avalanche Current (Note 1) 12.5 A AR E (Note 1) Repetitive Avalanche Energy 17 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 170 W D C - Derate above 25C 1.35 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQP13N50 R Thermal Resistance, Junction-to-Case, Max. 0.74 C/W JC R Thermal Resistance, Case-to-Sink, Max. 0.5 C/W CS 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQP13N50 Rev. C1