FQB5N60CTM WS N-Channel QFET MOSFET June 2015 FQB5N60CTM WS N-Channel QFET MOSFET 600 V, 4.5 A, 2.5 Features Description 4.5 A, 600 V, R = 2.5 (Max.) V = 10 V, I = 2.1 A This N-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQB5N60CTM WS Unit V Drain-Source Voltage 600 V DSS I - Continuous (T = 25C) Drain Current 4.5 A D C - Continuous (T = 100C) 2.6 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 210 mJ AS I Avalanche Current (Note 1) 4.5 A AR E Repetitive Avalanche Energy (Note 1) 10 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Power Dissipation (T = 25C) 100 W C P D - Derate Above 25C 0.8 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB5N60CTM WS Unit R Thermal Resistance, Junction to Case, Max. 1.25 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. 40 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQB5N60CTM WS Rev. 1.0 FQB5N60CTM WS N-Channel QFET MOSFET Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity 2 FQB5N60CTM WS FQB5N60CS D -PAK Tape and Reel 330 mm 24 mm 800 units Electrical Characteristics T = 25C unless otherwise noted. C Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BV V = 0 V, I = 250 A Drain-Source Breakdown Voltage 600 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.6 -- V/C D / T Coefficient J V = 600 V, V = 0 V -- -- 1 A DS GS I Zero Gate Voltage Drain Current DSS V = 480 V, T = 125C -- -- 10 A DS C I V = 30 V, V = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA GSSF GS DS I V = -30 V, V = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA GSSR GS DS On Characteristics V V = V , I = 250 A Gate Threshold Voltage 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 2.25 A -- 2.0 2.5 GS D On-Resistance g V = 40 V, I = 2.25 A Forward Transconductance -- 4.7 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 515 670 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance -- 55 72 pF oss f = 1.0 MHz C Reverse Transfer Capacitance -- 6.5 8.5 pF rss Switching Characteristics t Turn-On Delay Time -- 10 30 ns d(on) V = 300 V, I = 4.5 A, DD D t Turn-On Rise Time -- 42 90 ns r V = 10 V, R = 25 GS G t Turn-Off Delay Time -- 38 85 ns d(off) (Note 4) t Turn-Off Fall Time -- 46 100 ns f Q Total Gate Charge -- 15 19 nC g V = 480 V, I = 4.5 A, DS D Q Gate-Source Charge -- 2.5 -- nC V = 10 V gs GS (Note 4) Q Gate-Drain Charge -- 6.6 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 4.5 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A SM V V = 0 V, I = 4.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V SD GS S t V = 0 V, I = 4.5 A, Reverse Recovery Time -- 300 -- ns rr GS S Q dI / dt = 100 A/s Reverse Recovery Charge -- 2.2 -- C rr F NOTES: 1. Repetitive rating : pulse width limited by maximum junction temperature. 2. L = 18.9 mH, I = 4.5 A, V = 50V, R = 25 , starting T = 25C. AS DD G J 3. I 4.5 A, di/dt 200 A/s, V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FQB5N60CTM WS Rev. 1.0