X-On Electronics has gained recognition as a prominent supplier of FQB44N10TM MOSFETs across the USA, India, Europe, Australia, and various other global locations. FQB44N10TM MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FQB44N10TM ON Semiconductor

Name: FQB44N10TM
Brand: ON Semiconductor
SKU: FQB44N10TM_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

FQB44N10TM electronic component of ON Semiconductor

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See Product Specifications

Part No.	FQB44N10TM
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET 100V N-Channel QFET
Datasheet:	FQB44N10TM Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.5819 ea
Line Total: USD 1.58

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

FQB44N10TM More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
1372 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 2.1875 10 : USD 1.608 100 : USD 1.243 250 : USD 1.232 500 : USD 1.133 800 : USD 1.122 2400 : USD 1.0813

We are delighted to provide the FQB44N10TM from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FQB44N10TM and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The FQB44N10TM with MOSFET 100V N-Channel QFET is an insulated gate bipolar transistor (IGBT) manufactured by ON Semiconductor. It is designed to provide high DC current gain, low saturation voltage, fast switching speed, and improved system efficiency. It features an N-channel design for enhanced performance at higher currents. It can handle up to 100 volts and has a continuous drain current rating of 43A. This device is suitable for applications such as motor control, high-efficiency power converters, and solid state relays.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Aptina / ON Semiconductor may also be referenced as

FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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Manufacturer ON Semiconductor ON Semiconductor
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 43.5 A 43.5 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 39 mOhms 39 mOhms
Transistor Polarity n - channel n - channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 3.75 W 3.75 W
Mounting Style smd/smt smd/smt
Package / Case D2PAK D2PAK
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 25 V 25 V
Channel Mode enhancement enhancement
Configuration single single
Series fqb44n10 fqb44n10
Brand Fairchild Semiconductor Fairchild Semiconductor
Continuous Drain Current 43.5 A 43.5 A
Drain-Source Breakdown Voltage 100 V 100 V
Forward Transconductance - Min 30 s 30 s
Gate-Source Breakdown Voltage +/- 25 V +/- 25 V
Power Dissipation 3.75 W 3.75 W
Rds On 39 mohms 39 mohms
Fall Time 100 ns 100 ns
Rise Time 190 ns 190 ns
Factory Pack Quantity : 800 800
Typical Turn-Off Delay Time 90 ns 90 ns
Height 4.83 mm 4.83 mm
Length 10.67 mm 10.67 mm
Transistor Type 1 n - channel 1 n - channel
Type mosfet mosfet
Width 9.65 mm 9.65 mm
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets