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FQB30N06L N-Channel QFET MOSFET October 2013 FQB30N06L N-Channel QFET MOSFET 60 V, 32 A, 35 m Description Features This N-Channel enhancement mode power MOSFET is 32 A, 60 V, R = 35 m (Max) V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 16 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge ( Typ. 15 nC) technology has been especially tailored to reduce on-state Low Crss ( Typ. 50 pF) resistance, and to provide superior switching performance and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, audio amplifier, 175C Maximum Junction Temperature Rating DC motor control, and variable switching power applications. D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter FQB30N06LTM Unit V Drain-Source Voltage 60 V DSS I - Continuous (T = 25C) Drain Current 32 A D C - Continuous (T = 100C) 22.6 A C I (Note 1) Drain Current - Pulsed 128 A DM V Gate-Source Voltage 20 V GSS E (Note 2) Single Pulsed Avalanche Energy 350 mJ AS I Avalanche Current (Note 1) 32 A AR E (Note 1) Repetitive Avalanche Energy 7.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns Power Dissipation (T = 25C) * 3.75 W P A D Power Dissipation (T = 25C) 79 W C - Derate above 25C 0.53 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQB30N06LTM Unit R Thermal Resistance, Junction to Case, Max . 1.90 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 40 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQB30N06L Rev. C1