MOSFET P-Channel, QFET -200 V, -11.5 A, 470 m FQB12P20 General Description These PChannel enhancement mode power field effect transistors www.onsemi.com are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize V R MAX I MAX DSS DS(ON) D onstate resistance, provide superior switching performance, and 200 V 0.47 10 V 11.5 A withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. S Features G 11.5 A, 200 V, R = 0.47 V = 10 V DS(on) GS Low Gate Charge (Typical 31 nC) Low Crss (typical 30 pF) Fast Switching D 100% Avalanche Tested PCHANNEL MOSFET Improved dv/dt Capability These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FQB12P20 Unit V DrainSource Voltage 200 V DSS 2 D PAK3 (TO263, 3LEAD) I Drain Current Continuous (T = 25C) 11.5 A D C CASE 418AJ Continuous (T = 100C) C 7.27 A I Drain Current Pulsed (Note 1) 46 A DM MARKING DIAGRAM V GateSource Voltage +30 V GSS E Single Pulsed Avalanche Energy (Note 2) 810 mJ AS Y&Z&3&K I Avalanche Current (Note 1) 11.5 A AR FQB E Repetitive Avalanche Energy (Note 1) 12 mJ AR 12P20 dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25C) * 3.13 W D A Power Dissipation (T = 25C) 120 W C Derate above 25C 0.96 W/C FQB12P20 = Specific Device Code Y = ON Semiconductor Logo T , T Operating and Storage Temperature 55 to +150 C J STG Range &Z = Assembly Plant Code &3 = Digit Date Code T Maximum lead temperature for soldering 300 C L &K = Lot Run Traceability Code purposes, 1/8 from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 6 of *When mounted on the minimum pad size recommended (PCB Mount) this data sheet. 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.2 mH, I = 11.5 A, V = 50 V, R = 25 , Starting T = 25C AS DD G J 3. I 11.5 A, di/dt 300 A/ s, V BV Starting T = 25C SD DD DSS, J Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: December, 2019 Rev. 2 FQB12P20/DFQB12P20 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Parameter Typ Max Unit R Thermal Resistance, JunctiontoCase 1.04 C/W JC R Thermal Resistance, JunctiontoAmbient * 40 C/W JA R Thermal Resistance, JunctiontoAmbient 62.5 C/W JA *When mounted on the minimum pad size recommended (PCB Mount) ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) C Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 200 V DSS GS D BV / T Breakdown Voltage Temperature Coefficient I = 250 A, Referenced to 25C V/C DSS J D I Zero Gate Voltage Drain Current V = 200 V, V = 0 V 1 A DSS DS GS V = 160 V, T = 125C 10 A DS C I GateBody Leakage Current, Forward V = 30 V, V = 0 V 100 nA GSSF GS DS I GateBody Leakage Current, Reverse V = 30 V, V = 0 V 100 nA GSSR GS DS ON CHARACTERISTICS V Gate Threshold Voltage V = V , I = 250 A 3.0 5.0 V GS(th) DS GS D R Static DrainSource OnResistance V = 10 V, I = 5.75 A 0.36 0.47 DS(on) GS D g Forward Transconductance V = 40 V, I = 5.75 A (Note 4) 6.4 S FS DS D DYNAMIC CHARACTERISTICS V = 25 V, V = 0 V, f = 1.0 MHz C Input Capacitance iss DS GS 920 1200 pF C Output Capacitance 190 250 pF oss C Reverse Transfer Capacitance 30 40 pF rss SWITCHING CHARACTERISTICS t TurnOn Delay Time V = 100 V, I = 11.5 A, 20 50 ns d(on) DD D R = 25 G t TurnOn Rise Time 195 400 ns r (Note 4, 5) t TurnOff Delay Time 40 90 ns d(off) t TurnOff Fall Time 60 130 ns f Q Total Gate Charge V = 160 V, I = 11.5 A, 31 40 nC g DS D V = 10 V GS Q GateSource Charge 8.1 nC gs (Note 4, 5) Qg GateDrain Charge 16 nC d DRAINSOURCE DIODE CHARACTERISTICS AND MAXIMUMUM RATINGS I Maximum Continuous DrainSource Diode Forward Current 11.5 A S I Maximum Pulsed DrainSource Diode Forward Current 46 A SM V DrainSource Diode Forward Voltage V = 0 V, I = 11.5 A 5.0 V SD GS S t Reverse Recovery Time V = 0 V, I = 11.5 A, 180 ns GS S rr dI / dt = 100 A/ s (Note 4) F Q Reverse Recovery Charge 1.44 C rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature www.onsemi.com 2