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V = 10 V, DS(on) GS I = 11.8 A produced using Fairchild Semiconductors proprietary D planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 110 nC) MOSFET technology has been especially tailored to Low Crss (Typ. 56 pF) reduce on-state resistance, and to provide superior 100% Avalanche Tested switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G G D TO-3PN S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FQA24N60 Unit V Drain-Source Voltage 600 V DSS I - Continuous (T = 25C) Drain Current 23.5 A D C - Continuous (T = 100C) 14.9 A C I (Note 1) Drain Current - Pulsed 94 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 1300 mJ AS I Avalanche Current (Note 1) 23.5 A AR E Repetitive Avalanche Energy (Note 1) 31 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V ns P Power Dissipation (T = 25C) 310 W D C - Derate above 25C 2.5 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering, T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQA24N60 Unit R Thermal Resistance, Junction-to-Case, Max. 0.4 C W JC 0.24 R Thermal Resistance, Case-to-Sink, Typ. C W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C W JA 2000 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQA24N60 Rev. C2