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FQA36P15 P-Channel QFET MOSFET June 2014 FQA36P15 P-Channel QFET MOSFET 150 V, -36 A, 90 m Features Description -36 A, -150 V, R = 90 m (Max) V = -10 V, I = -18 A This P-Channel enhancement mode power MOSFET is DS(on) GS D produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 81 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 110 pF) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for 175C Maximum Junction Temperature Rating switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S G G D TO-3PN S D Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FQA36P15 Unit V Drain-Source Voltage -150 V DSS I Drain Current - Continuous (T = 25C) -36 A D C - Continuous (T = 100C) -25.5 A C I Drain Current - Pulsed (Note 1) -144 A DM V Gate-Source Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1400 mJ AS I Avalanche Current (Note 1) -36 A AR E Repetitive Avalanche Energy (Note 1) 29.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns P Power Dissipation (T = 25C) 294 W D C - Derate above 25C 1.96 W/C T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter FQA36P15 Unit R Thermal Resistance, Junction-to-Case, Max. 0.51 C/W JC R Thermal Resistance, Case-to-Sink, Typ. 0.24 C/W CS R Thermal Resistance, Junction-to-Ambient, Max. 40 C/W JA www.fairchildsemi.com 2000 Fairchild Semiconductor Corporation 1 FQA36P15 Rev C2